BAS116 HUIXIN | Alldatasheet
Document overview
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Technical content
Features
- Low leakage switching diode
- Plastic SMD package
- Low leakage current Application
- Low leakage current applications in surface mounted circuits. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 215 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 ms t = 1 s IFSM 0.5 A Power Dissipation Ptot 250 mW Junction Temperature Tj 150 OC Storage Temperature Range Tstg - 65 to + 150 OC Thermal Characteristics Parameter Symbol Max. Unit Thermal Resistance from Junction to Ambient 1) RθJA 500 /W 1) Device mounted on FR-4 PCB with minimum recommended pad layout. 1. Anode 2. NC 3. Cathode SOT-23 Plastic Package 6GMK1UL4
Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF 0.9 1.1 1.25 V V V V Reverse Current at VR = 75 V at VR = 75 V, Tj = 150 OC IR nA Reverse Breakdown Voltage at IR = 10 µA V(BR)R 75 - V Diode Capacitance at VR = 0, f = 1 MHz Cd - 2 pF Reverse Recovery Time at IF = IR = 10 mA, RL = 100 Ω, Irr = 0.1 x IR trr - 3 µs 6GMK2UL4
Electrical Characteristics Curves Fig 2. Capacitance Characteristics Curve Fig 4. Forward Characteristics Curve Fig 3. Reverse Characteristics Curve VF, Forward Voltage (V) VR, Reverse Voltage (V) Ta, Ambient Temperature VR, Reverse Voltage (V) IR, Reverse Current (µA) Cj, Junction Capacitance(pF) PD, Power Dissipation (mW) IF, Forward Current(mA) Fig 1. Power Derating Curve TJ=125 TJ=75 TJ=25 TJ=-55 6GMK3UL4 Marking information " JV " = Part No. " • " = HAF (Halogen and Antimony Free) "YM" = Date Code Marking "Y" = Year "M" = Month Font type: Arial JV