BAR99 KEXIN | Alldatasheet
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Technical content
Features
Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Reverse voltage V R 70 V Peak reverse volatge V RM 70 V Forward current I F 250 mA Surege forward current, T = 1 s IFS 4.5 A Total power dissipation, Ts = 54 Ptot 370 mW Junction temperature T j 150 Storage temperature range T stg - 6 5t o+ 1 5 0 Junction ambient (Note 1) R th JA 330 K/W Junction soldering point R th JS 260 K/W Note 1. Package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm 2 Cu.
2 www.kexin.com.cn Silicon Switching Diode BAR99 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Breakdown voltage V R IR =100 A 70 V IF = 1 mA 715 IF = 10 mA 855 IF = 50 mA 1000 IF = 150 mA 1250 VR =7 0V 2 . 5 VR =2 5V , TA = 150 30 VR =7 0V , TA = 150 50 Diode capacitance C D VR =0V , f=1M H z 1 . 5 p F IF =I R =1 0m A , RL = 100 measured at IR =1m A Reverse recovery time t rr 6n s A Forward voltage V F mV Reverse current I R Marking Marking JGs