BAR81W KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Features
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage V R 30 V Forward current I F 100 mA Total power dissipation, T S = 103 Ptot 100 mW Junction temperature T j 150 Operating temperature range T op - 5 5t o+1 2 5 Storage temperature range T stg - 5 5t o+1 5 0 Junction - ambient 1) Rth JA 200 K/W Junction - soldering point R th JS 120 K/W Note 1.Package mounted on alumina 15mm 16.7mm 0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Min Typ Max Unit Reverse current I R VR = 20 V 20 nA Forward voltage V F IF = 100 mA 0.93 1 V VR =1V ,f=1M H z 0 . 6 VR = 3 V, f = 1 MHz 0.57 Forward resistance rf I F = 5 mA, f = 100 MHz 0.7 Series inductance t rr 0.15 nH pFDiode capacitance C T Marking Marking BBs