BAR64-3 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Diodes PIN Diodes ■ Features

  • High voltage current controlled
  • RF resistor for RF attenuator and swirches
  • Freqency range above 1 MHz
  • Low resistance and short carrier lifetime
  • For frequencies up to 3 GHz ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100uA 200 Forward voltage VF IF= 50 mA 1.1 IR1 VR=200 V 10 IR2 VR= 40V 1 IF = 1 mA, f = 100 MHz 20 IF = 10 mA, f = 100 MHz 3.8 IF = 100 mA, f = 100 MHz 1.35 Series inductance LS 1.4 nH Capacitance between terminals CT VR= 20 V, f= 1 MHz 0.35 pF Reverse recovery time trr IF=10mA ,IR=6mA ,IR=3mA 1.55 us Reverse voltage leakage current uA V Forward resistance rf Ω BAR64 BAR64-06 BAR64-05 BAR64-04 Parameter Symbol Rating Unit Peak Reverse Voltage VR 200 V Forward Current IF 100 mA BAR64 @ Ts ≤ 90°C BAR64-04/05/06 @ Ts ≤ 65°C Thermal Resistance Junction to Ambient BAR64 320 BAR64-04/05/06 500 Thermal Resistance Junction to Soldering Point BAR64 240 BAR64-04/05/06 340 Junction Temperature TJ 150 Operating Temperature Range Top -55 to 150 Storage Temperature range Tstg -55 to 150 PD 250 mW RθJA RθJS ℃/W Power Dissipation IF = 10 mA, f = 100 MHz 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 Dio des PIN Diodes ■ Marking ■ Typical Characterisitics Forward current rF= f (TS;TA*) * mounted on alumina BAR64 Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06 IF mA T TA S T TAS IF mA T T A S T T A S NO BAR64 BAR64-04 BAR64-05 BAR64-06 Marking PO PP PR PS

www.kexin.com.cn 3 Dio des PIN Diodes ■ Typical Characterisitics Permissible pulse load RthJS = f (tp) BAR64 Permissible pulse load Ifmax/If DC=f(tp) BAR64 K/W Permissible pulse load RthJS= f (tp) BAR64-04,-05,-06 Permissible pulse load IFmax/IFDC = f (tp) BAR64-04,-05,-06 K/W

www.kexin.com.cn4 Diodes PIN Diodes ■ Typical Characterisitics Forward current IF=f(VF) Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz.