BAR64-05W VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.0, 28-May-2021 1 Document Number: 86199 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RF PIN Diodes - Dual, Common Cathode in SOT-323 LINKS TO ADDITIONAL RESOURCES

DESCRIPTION

Characterized by low revers e capacitance the PIN diode BAR64-05W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for these PIN diodes are switches and attenuators in wireless, mobile, and TV-systems.

FEATURES

  • High voltage current controlled RF resistor
  • Small diode capacitance
  • Low series inductance
  • Low forward resistance
  • Material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912

APPLICATIONS

  • For frequencies up to 3 GHz
  • RF-signal tuning
  • Signal attenuator and switches
  • Mobile, wireless, and TV-applications MECHANICAL DATA Case: SOT-323 Weight: approx. 5.7 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box 333DDD3 D 3D Models PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAR64-05W BAR64-05W-E3-08 R64 Common cathode Tape and reelBAR64-05W-E3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PART TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 100 V Forward continuous current I F 100 mA ESD-immunity HBM (Human Body Model) acc. AEC-Q101-001 VESD 750 V THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T j 150 °C Storage temperature range T stg -65 to +150 °C Operating temperature range T op -55 to +125 °C

www.vishay.com Vishay Semiconductors Rev. 1.0, 28-May-2021 2 Document Number: 86199 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified) Fig. 1 - Forward Resistance vs. Forward Current Fig. 2 - Diode Capacitance vs. Reverse Voltage Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Typical Charge Recovery Curve ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 50 mA V F -- 1 . 1 V Reverse voltage I R = 10 μA V R 100 - - V Reverse current V R = 50 V I R - - 0.05 μA Diode capacitance f = 1 MHz, VR = 0 V C D -0 . 5-p F f = 1 MHz, VR = 1 V C D - 0.37 0.5 pF f = 1 MHz, VR = 20 V C D - 0.23 0.35 pF Differential forward resistance f = 100 MHz, IF = 1 mA r f -1 0 2 0 Ω f = 100 MHz, IF = 10 mA r f -2 3 . 8 Ω f = 100 MHz, IF = 100 mA r f -0 . 8 1 . 3 5 Ω Charge carrier lifetime I F = 10 mA, IR = 6 mA, iR = 3 mA t rr -1 . 4- μ s Series inductance L S -1 . 4-n H 0.1 1.0 10.0 100.0 0.1 1 10 100

18342 I - Forward Current (mA)F

r - Forward Resistance (/g58)f f = 100 MHz 100 1000 10000 0.1 0.2 0.3 0.4 0.5 0.6 0.01 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line CD (pF) VR (V) f = 1 MHz 23175 0.01 0.10 1.00 10.00 100.00 I - Forward Current (mA) V - Forward Voltage (V)F18326 F -10 - 1 012345 2nd line IF - Forward Current (mA) trr - Reverse Recovery Time (µs) IF = 10 mA IR = 6 mA IR = 3 mA 23176

www.vishay.com Vishay Semiconductors Rev. 1.0, 28-May-2021 3 Document Number: 86199 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOT-323 foot print recommendation: Rev. 1 - Date: 06. April 2010 21113 Document no.: 6.541-5040.02-4 1.3 (0.051) 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 0.6 (0.024) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.8 (0.031) 2.2 (0.087) 2.0 (0.079) 0.4 (0.016) 0.2 (0.008) 1.35 (0.053) 1.15 (0.045) 1.4 (0.055) 1.2 (0.047) 1.0 (0.039) 0.8 (0.031) 0.525 (0.021) ref. 2.45 (0.096) 2.15 (0.085) 0.65 (0.026) typ 0.46 (0.018) 0.26 (0.010) 8° 0° 0.1 (0.004) 0.0 (0.000)

www.vishay.com Vishay Semiconductors Rev. 1.0, 28-May-2021 4 Document Number: 86199 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORIENTATION IN CARRIER TAPE SOT-323 CARRIER TAPE SOT-323 Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 Top view Unreeling direction 22761 Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 22762 A A-A Section A4 ± 0.12 ± 0.05 1.75 ± 0.1 0.254 ± 0.013 Ø 1+0.25 0.00 4 ± 0.1 B B 3.5 ± 0.05 8 +0.3 -0.1 B-B Section 2.4 +0.1 +0.1 1.19 ± 0.1 2.4 ± 0.1 Ø 1.55+0.1 0.0

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