BAR63 KEXIN | Alldatasheet
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Features
PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Reverse voltage V R 50 V Forward current I F 100 mA Total power dissipation BAR63 T S 80 250 BAR 63-04,-05,-06 T S 55 250 Operating temperature range T op - 5 5t o+ 1 5 0 Storage temperature range T stg - 5 5t o+ 1 5 0 Junction - ambient 1) BAR63 450 BAR 63-04,-05,-06 540 Junction - soldering point BAR63 280 BAR63-04,-05,-06 380 Note 1. Package mounted on alumina 15mm 16.7mm 0.7mm R thJS R thJA K/W K/W P tot mW
2 www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Min Typ Max Unit Breakdown voltage V (BR) IR =5 A 50 V Reverse leakage I R VR = 20 V 50 nA Forward voltage V F IF = 100 mA 0.95 1.2 V VR = 0 , f = 100 MHz 0.3 pF VR = 5 V , f = 1 MHz 0.21 0.3 pF IF =5m A ,f=1 0 0M H z 1 . 2 2 IF =1 0m A ,f=1 0 0M H z 1 Charge carrier life time ô S IF =1 0m A ,IR =6m A , IR = 3 mA 75 ns Series inductance L S 1.4 nH Diode capacitance C T Forward resistance r f BAR 63;BAR63-04 BAR 63-05;BAR63-06 Marking Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 M a r k i n g G 3G 4G 5G 6