BAR50-03W KEXIN | Alldatasheet
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Technical content
Features
Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) VLow forward resitance Very low harmonics Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage V R 50 V Forward current I F 100 mA Total power dissipation T S 116 P tot 250 mW Junction temperature T j 150 Operating temperature range T op -55 to +125 Storage temperature range T stg -55 to +150 Junction - soldering point 1) R thJS 135 K/W
2 www.kexin.com.cn BAR50-03W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Reverse current I R VR = 50 V 50 nA Forward voltage V F IF =5 0m A 0 . 9 5 1 . 1 V VR = 1 V, f = 1 MHz 0.24 0.5 VR =5V ,f=1M H z 0 . 2 0 . 4 VR =0V ,f=1 0 0M H z 0 . 2 VR =0V ,f=1 0 0M H z 2 5 VR =0V ,f=1G H z 6 VR =0V ,f=1 . 8G H z 5 IF =0 . 5m A ,f=1 0 0M H z 2 5 4 0 IF = 1 mA, f = 100 MHz 16.5 25 IF = 10 mA, f = 100 MHz 3 4.5 IF =1 0m A ,IR = 6 mA,measured at IR =3m A , RL = 100 I-region width W I 56 ìm IF =3m A ,f=1 . 8G H z - 0 . 5 6 IF =5m A ,f=1 . 8G H z - 0 . 4 IF =1 8m A ,f=1 . 8G H z - 0 . 2 7 VR = 0 V, f = 0.9 GHz -24.5 VR =0V ,f=1 . 8G H z - 2 0 VR = 0 V, f = 2.45 GHz -18 VR =0V ,f=5 . 6G H z - 1 2 Diode capacitance C T Forward resistance pF 1100 rf Isolation |S21|2 Reverse parallel resistance Rp Charge carrier life time rr Insertion loss |S21|2 dB dB ns K Marking Marking blue A