BAR-50-02V-H6327 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
BAR50... Silicon PIN Diodes
- Current-controlled RF resistor for switching and attenuating applications
- Frequency range above 10 MHz up to 6 GHz
- Especially useful as antenna switch in mobile communication
- Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF)
- Low forward resistance
- Very low harmonic distortion
- Pb-free (RoHS compliant) package
- Qualified according AEC Q1011) BAR50-02L BAR50-02V BAR50-03W /G31 /G32 Type Package Configuration LS(nH) Marking BAR50-02L* BAR50-02V BAR50-03W TSLP-2-1 SC79 SOD323 single, leadless single single 0.4 0.6 1.8 AB a blue A 1*BAR50-02L is not qualified according AEC Q101
BAR50... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation BAR50-02L, T S ≤ 130°C BAR50-02V, TS ≤ 120°C BAR50-03W, TS ≤ 115°C Ptot 250 250 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W RthJS ≤ 80 ≤ 120 ≤ 140 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current V R = 50 V IR - - 50 nA Forward voltage I F = 50 mA VF - 0.95 1.1 V 1For calculation of RthJA please refer to Application Note Thermal Resistance
BAR50... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1...1.8 GHz, BAR50-02L VR = 0 V, f = 1...1.8 GHz, all other CT 0.24 0.2 0.2 0.1 0.15 0.5 0.4 pF Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz RP kΩ Forward resistance I F = 0.5 mA, f = 100 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 16.5 4.5 Ω Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω τ rr - 1100 - ns I-region width WI - 56 - µm Insertion loss1) IF = 3 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz IL 0.56 0.4 0.27 dB Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz VR = 0 V, f = 5.6 GHz ISO 24.5 1BAR50-02L in series configuration, Z = 50 Ω
BAR50... Diode capacitance CT = ƒ (VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR 0.1 0.15 0.2 0.25 0.3 0.35 0.4 pF 0.5 CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR -1 10 0 10 1 10 2 10 3 10 KOhmRp Forward resistance rf = ƒ (IF) f = 100 MHz 10 -2 10 -1 10 0 10 1 10 2 mA IF -1 10 0 10 1 10 2 10 3 10 4 10 Ohmrf Forward current IF = ƒ (VF) TA = Parameter VF -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IF -40 °C 25 °C 85 °C 125 °C
BAR50... Forward current IF = ƒ (TS) BAR50-02L 0 15 30 45 60 75 90 105 120 °C 150 TS 100 mA 120 IF Forward current IF = ƒ (TS) BAR50-02V 0 15 30 45 60 75 90 105 120 C° 150 TS 100 mA 120 IF Forward current IF = ƒ (TS) BAR50-03W 0 15 30 45 60 75 90 105 120 C° 150 TS 100 mA 120 IF Permissible Pulse Load RthJS = ƒ (tp) BAR50-02L 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C tp 0 10 1 10 2 10 mA RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005
BAR50... Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAR50-02L 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C tp 0 10 1 10 mA IFmax/ IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load RthJS = ƒ (tp) BAR50-02V 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAR50-02V 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp 0 10 1 10 IFmax/IFDC 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load RthJS = ƒ (tp) BAR50-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 RthjS 0.5 0.2 0.1 0.05 0.02 0.01 0.005
BAR50... Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAR50-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/IFDC 0.005 0.1 0.2 0.5 Isolation ISO = -|S21|2 = ƒ(f) VR = Parameter BAR50-02L in series configuration, Z = 50Ω 0 1 2 3 4 GHz 6 f -30 -25 -20 -15 -10 dB |S21|2 0 V 1 V 10 V Insertion loss IL = -|S21|2 = ƒ(f) IF = Parameter BAR50-02L in series configuration, Z = 50Ω 0 1 2 3 4 GHz 6 f -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 dB |S21|2 5 mA 10 mA 100 mA 3 mA
BAR50...Package SC79
BAR50... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code 1) New Marking Layout for SC75, implemented at October 2005. Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 201 3 2014 0 1 apAPapAPapAP 0 2 bqB Q bqB Q bqB Q 0 3 crC R crC R crC R 0 4 d sDSd sDSd sDS 0 5 e t ETe t ETe t ET 0 6 fuF U fuF U fuF U 0 7 gvG VgvG VgvG V 0 8 h xHXh xHXh xHX 0 9 jyJ Y jyJ Y jyJ Y 1 0 k zKZk zKZk zKZ 1 1 l 2L4 l 2L4 l 2L4 1 2 n3N5n3N5n3N5
BAR50...Package SOD323
BAR50...Package TSLP-2-1
BAR50... Edition 2009-11-16 Published by Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.