BAP70-03 KEXIN | Alldatasheet
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Technical content
Features
High voltage, current controlled RF resistor forattenuators Low diode capacitance Very low series inductance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 50 V continuous forward current I F 100 mA total power dissipation Ts = 90 Ptot 500 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage V F IF = 50 mA 0.95 1.1 V reverse leakage current I R VR = 30 V 20 nA VR =0 ;f=1M H z 5 7 0 VR = 1 V; f = 1 MHz 400 VR = 5 V; f = 1 MHz 270 VR = 20V; f = 1 MHz 200 250 IF = 0.5 mA; f = 100 MHz 77 100 IF =1m A ;f=1 0 0M H z 4 0 5 0 IF = 10 mA; f = 100 MHz 5.4 7 IF = 100 mA; f = 100 MHz 1.4 1.9 when switched from IF =1 0m At oIR =6m A ; RL = 100 ;measured at IR =3m A series inductance L S IF = 100 mA; f = 100 MHz 1.5 nH fFdiode capacitance C d rDdiode forward resistance ìsLcharge carrier life time 1.25 Marking Marking A9