BAP70-02 KEXIN | Alldatasheet
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Technical content
Features
High voltage, current controlled RF resistor for attenuators Low diode capacitance Very low series inductance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 50 V continuous forward current I F 100 mA total power dissipation Ts = 90 Ptot 415 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 145 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage V F IF =5 0m A 0 . 9 1 . 1 V reverse leakage current I R VR =50 V 20 nA VR = 0; f = 1 MHz 570 VR = 1 V; f = 1 MHz 400 VR = 5 V; f = 1 MHz 270 VR =2 0V ;f=1M H z 2 0 0 2 5 0 IF = 0.5 mA; f = 100 MHz; note 1 77 100 IF = 1 mA; f = 100 MHz; note 1 40 50 IF = 10 mA; f = 100 MHz; note 1 5.4 7 IF = 100 mA; f = 100 MHz; note 1 1.4 1.9 when switched from IF =1 0m At oIR =6m A ; RL =1 0 0 ,measured at IR =3m A series inductance L S IF =1 0 0m A ;f=1 0 0M H z 0 . 6 n H Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. scharge carrier life time L 1.25 Cd fF diode forward resistance r D diode capacitance Marking Marking K8