BAP65-05 KEXIN | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
Two elements in common cathode configuration High voltage, current controlled RF resistor for RF switches Low diode capacitance Low diode forward resistance (low loss). Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 30 V continuous forward current I F 100 mA total power dissipation Ts 90 P tot 250 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 220 K/W
2 www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage V F IF =5 0m A 0 . 9 5 1 . 1 V reverse leakage current V R VR = 20 V 20 nA VR =0 ;f=1M H z 0 . 7 VR = 1 V; f = 1 MHz 0.575 0.9 VR = 3 V; f = 1 MHz 0.525 0.8 VR = 20 V; f = 1 MHz 0.425 IF =1m A ;f=1 0 0M H z 1 IF = 5 mA; f = 100 MHz; note 1 0.65 0.95 IF = 10 mA; f = 100 MHz; note 1 0.56 0.9 IF = 100 mA; f = 100 MHz 0.35 VR =0 ;f=9 0 0M H z 9 . 4 VR = 0; f = 1800 MHz 4.8 VR = 0; f = 2450 MHz 3.1 IF =1m A ;f=9 0 0M H z 0 . 1 IF = 1 mA; f = 1800 MHz 0.18 IF = 1 mA; f = 2450 MHz 0.28 IF =5m A ;f=9 0 0M H z 0 . 0 8 IF = 5 mA; f = 1800 MHz 0.16 IF = 5 mA; f = 2450 MHz 0.26 IF = 10 mA; f = 900 MHz 0.07 IF = 10 mA; f = 1800 MHz 0.15 IF = 10 mA; f = 2450 MHz 0.25 IF = 100 mA; f = 900 MHz 0.06 IF = 100 mA; f = 1800 MHz 0.14 IF = 100 mA; f = 2450 MHz 0.24 when switched from IF =1 0m At o IR =6 m A ;RL = 100 ,measured at IR =3m A series inductance L S IF = 100 mA; f = 100 MHz 1.4 nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. dB dB dB pF dB dB diode capacitance C d isolation |s21|2 scharge carrier life time L 0.17 insertion loss |s21|2 diode forward resistance r D insertion loss |s21|2 |s21|2insertion loss insertion loss |s21|2 BAP65-05 Marking Marking 7Kp