BAP65-03 KEXIN | Alldatasheet
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Technical content
Features
High voltage, current controlled RF resistor for RF switches Low diode capacitance Low diode forward resistance (low loss) Very low series inductance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 30 V continuous forward current I F 100 mA total power dissipation T S 90 Ptot 500 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 120 K/W
2 www.kexin.com.cn BAP65-03 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage V F IF = 50 mA 0.95 1.1 V reverse leakage current I R VR =2 0V 2 0 n A VR =0 ;f=1M H z 0 . 6 5 VR =1V ;f=1M H z 0 . 5 5 0 . 9 VR =3V ;f=1M H z 0 . 5 0 . 8 VR = 20V; f = 1 MHz 0.375 IF = 1 mA; f = 100 MHz; note 1 1 IF = 5 mA; f = 100 MHz; note 1 0.65 0.95 IF = 10 mA; f = 100 MHz; note 1 0.56 0.9 IF = 100 mA; f = 100 MHz 0.35 VR =0 ;f=9 0 0M H z 1 0 . 2 VR = 0; f = 1800 MHz 5.8 VR = 0; f = 2450 MHz 4.1 VR =1 ;f=9 0 0M H z 0 . 1 VR = 1; f = 1800 MHz 0.14 VR = 1; f = 2450 MHz 0.18 VR =5 ;f=9 0 0M H z 0 . 0 6 VR = 5; f = 1800 MHz 0.1 VR = 5; f = 2450 MHz 0.14 VR = 10; f = 900 MHz 0.06 VR =1 0 ;f=1 8 0 0M H z 0 . 1 VR =1 0 ;f=2 4 5 0M H z 0 . 1 3 VR =1 0 0 ;f=9 0 0M H z 0 . 0 5 VR = 100; f = 1800 MHz 0.1 VR = 100; f = 2450 MHz 0.14 when switched from IF =1 0m At oIR =6m A ; RL =1 0 0 ;measured at IR =3m A series inductance L S IF = 100 mA; f = 100 MHz 1.5 nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. ìs Lcharge carrier life time 0.17 diode capacitance C d rDdiode forward resistance insertion loss insertion loss insertion loss |s21| |s21|2 |s21|2 |s21|2 |s21|2 isolation insertion loss dB dB dB pF dB dB Marking Marking D3