BAP65-01 PHILIPS | Alldatasheet

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Technical content

Preliminary specification 2001 Nov 01 DISCRETE SEMICONDUCTORS BAP65-01 Silicon PIN diode M3D319

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Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01

FEATURES

  • High voltage, current controlled
  • RF resistor for RF switches
  • Low diode capacitance
  • Low diode forward resistance (low loss)
  • Very low series inductance.

APPLICATIONS

  • RF attenuators and switches
  • Bandswitch for TV tuners
  • Series diode for mobile communication transmit/receive switch.

DESCRIPTION

Planar PIN diode in a SOD723A ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage 12 Top view MAM405 Marking code: K6. Fig.1 Simplified outline (SOD723A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 100 mA Ptot total power dissipation T s ≤ 90 °C − 315 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C

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Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01

ELECTRICAL CHARACTERISTICS

Tj= 2 5°C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage I F =5 0m A 0 . 9 1 . 1 V IR reverse leakage current V R =2 0V − 20 nA C d diode capacitance V R = 0 V; f = 1 MHz 0.61 − pF VR = 1 V; f = 1 MHz 0.48 0.9 pF VR = 3 V; f = 1 MHz 0.43 0.8 pF VR = 20 V; f = 1 MHz 0.375 − pF rD diode forward resistance I F = 1 mA; f = 100 MHz 1.0 −Ω IF = 5 mA; f = 100 MHz; note 1 0.6 0.95 Ω IF = 10 mA; f = 100 MHz; note 1 0.5 0.9 Ω IF = 100 mA; f = 100 MHz 0.3 −Ω |s21|2 isolation V R = 0; f = 900 MHz 9.4 − dB VR = 0; f = 1800 MHz 5.5 − dB VR = 0; f = 2450 MHz 4.1 − dB |s21|2 insertion loss I F = 1 mA; f = 900 MHz 0.10 − dB IF = 1 mA; f = 1800 MHz 0.12 − dB IF = 1 mA; f = 2450 MHz 0.15 − dB |s21|2 insertion loss I F = 5 mA; f = 900 MHz 0.08 − dB IF = 5 mA; f = 1800 MHz 0.10 − dB IF = 5 mA; f = 2450 MHz 0.12 − dB |s21|2 insertion loss I F =1 0m A ; f=9 0 0M H z 0 . 0 6 − dB IF = 10 mA; f = 1800 MHz 0.09 − dB IF = 10 mA; f = 2450 MHz 0.11 − dB |s21|2 insertion loss I F = 100 mA; f = 900 MHz 0.05 − dB IF = 100 mA; f = 1800 MHz 0.08 − dB IF = 100 mA; f = 2450 MHz 0.10 − dB τL charge carrier life time when switched from I F =1 0m A t o IR =6m A ; RL = 100Ω ; measured at IR =3m A 0.17 −µ s LS series inductance I F = 100 mA; f = 100 MHz 0.6 − nH SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 190 K/W

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Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 GRAPHICAL DATA 0.1 0.1 1 10 100 IF (mA) rD (Ω ) Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj=2 5°C. 100 200 300 400 500 600 700 0 4 8 12 16 20 V R (V) C d (pF) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f=1M H z ; Tj=2 5°C. -0.5 -0.4 -0.3 -0.2 -0.1 0123 f (GHz) 21|2 (dB) (2)(1) (5)(4) (3) Fig.4 Insertion loss (|s21|2) of the diode as a function of frequency; typical values. Diode inserted in series with a 50Ω stripline circuit and biased via the analyzer Tee network. Tamb =2 5°C. (1) IF =0 . 5m A . (2) IF =1m A . (3) IF =5m A . (4) IF =1 0m A . (5) IF =1 0 0m A . -40 -30 -20 -10 0123 f (GHz) 21|2 (dB) Fig.5 Isolation (|s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50Ω stripline circuit. Tamb =2 5°C.

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Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 PACKAGE OUTLINE SOD723A Fig.6 /c85 /c78 /c68 /c69 /c82 /c32 /c68 /c69 /c86 /c69 /c76 /c79 /c80 /c77 /c69 /c78 /c84

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Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com.F a x : +31 40 27 24825 Printed in The Netherlands 613512/02/pp 7 Date of release: 2001 Nov 01 Document order number: 9397 750 08974