BAP64-04-HF-3 KEXIN | Alldatasheet

Document overview

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Technical content

www.kexin.com.cn 1 Diodes ■ Features

  • High voltage, current controlled
  • RF resistor for RF attenuators and switches
  • Low diode capacitance
  • Low diode forward resistance
  • Low series inductance
  • For applications up to 3 GHz. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Continuous Reverse Voltage VR 175 V Continuous Forward Current IF 100 mA Power Dissipation @ Ts = 90 °C PD 250 mW Thermal Resistance from Junction to Ambient RθJA 500 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -65 to 150 BAP64-04-HF BAP64-05-HF BAP64-06-HF PIN Diodes BAP64-04/05/06-HF (KAP64-04/05/06-HF)
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 Diodes ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Forward voltage VF IF= 50 mA 1.1 V VR=175V 10 VR=20 V 1 IF = 0.5 mA , f = 100 MHz 40 IF = 1 mA , f = 100 MHz 20 IF = 10 mA , f = 100 MHz 3.8 IF = 100 mA , f = 100 MHz 1.35 VR= 0 V, f= 1 MHz 0.52 VR= 1 V, f= 1 MHz 0.5 VR= 20 V, f= 1 MHz 0.35 Series inductance LS 1.4 nH Charge carrier life time TL when switched from IF = 10 mA to IR = 6mA; RL = 100 Ω; measured at IR = 3 mA 1.55 us Reverse voltage leakage current uAIR Diode capacitance Cd pF Diode forward resistance (Note.1) rD Ω Note.1: Guaranteed on AQL basis: inspection level S4, AQL 1.0. ■ Marking NO BAP64-04-HF BAP64-05-HF BAP64-06-HF Marking 4K F 5K F 6K F IF=10mA, f=100MHz PIN Diodes BAP64-04/05/06-HF (KAP64-04/05/06-HF)

www.kexin.com.cn 3 Dio des ■ Typical Characterisitics 0 25 50 75 100 125 150 100 150 200 250 300 0.1 100 0 35 70 105 140 175 0.1 100 1000 0 2 4 6 8 10 12 14 16 18 20 0.0 0.1 0.2 0.3 0.4 0.5 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION PD (W) AMBIENT TEMPERATURE Ta ( )℃ Ta =100℃ Ta =25℃ FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Capacitance Characteristics Per Diode REVERSE VOLTAGE VR (V) JUNCTION CAPACITANCE CJ (pF) PIN Diodes BAP64-04/05/06-HF (KAP64-04/05/06-HF)