BAP64-05 SECOS | Alldatasheet
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Small Signal General Purpose Pin Diode 01-Jun-2005 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 2 1 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low diode forward resistance z Low series inductance z High voltage, current controlled z RF resistor for RF attenuators and switches z For applications up to 3 GHz z RF attenuators and switches PACKAGING INFORMATION Weight: 0.0078 g (Approximate) MARKING CODE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Continuous Reverse Voltage V R 175 V Continuous Forward Current I F 100 mA Power Dissipation P D 250 mW Junction, Storage Temperature T J, TSTG 150, -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage V F - - 1.1 V I F = 50 mA
10 Reverse Voltage Leakage Current I R - -
μA VR = 175 V VR = 20 V - 0.52 - V R = 0, f = 1 MHz - 0.37 - V R = 1 V, f = 1 MHz Diode Capacitance C D - 0.23 0.35 pF VR = 20 V, f = 1 MHz - 20 40 I F = 0.5 mA, f = 100 MHz - 10 20 I F = 1 mA, f = 100 MHz - 2 3.8 I F = 10 mA, f = 100 MHz Diode Forward Resistance r D - 0.7 1.35 Ω IF = 100 mA, f = 100 MHz Charge Carrier Life Time t L - 1.55 - μS When switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA Series Inductance L S - 1.4 - nH A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.80 2.00 L 0.89 1.02 F 0.30 0.50 SOT-23
Small Signal General Purpose Pin Diode 01-Jun-2005 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES BAP64-05