BAP64-05 KEXIN | Alldatasheet
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Technical content
Features
High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 175 V continuous forward current I F 100 mA total power dissipation Ts = 90 Ptot 250 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 220 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit forward voltage V F IF = 50 mA 0.95 1.1 V VR = 175 V 10 A VR =2 0V 1 A VR = 0; f = 1 MHz 0.52 VR = 1 V; f = 1 MHz 0.37 0.5 VR = 20 V; f = 1 MHz 0.23 0.35 IF = 0.5 mA; f = 100 MHz; note 1 20 40 IF = 1 mA; f = 100 MHz; note 1 10 20 IF = 10 mA; f = 100 MHz; note 1 2 3.8 IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 when switched from IF =1 0m At o IR =6 m A ;RL = 100 ,measured at IR =3m A series inductance L S 1.4 nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. pF reverse leakage current V R diode forward resistance r D diode capacitance C d Scharge carrier life time L 1.55 Marking Marking 5Kp