BAP64-03 SKTECHNOLGY | Alldatasheet

Document overview

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Technical content

FEATURES

  • High voltage, current controlled
  • RF resistor for RF attenuators and switches
  • Low diode capacitance
  • Low diode forward resistance
  • Low series inductance
  • For applications up to 3 GHz.

APPLICATIONS

  • RF attenuators and switches.

DESCRIPTION

Planar PIN diode in a SOD323 very small plastic SMD package. Marking code: A3 handbook, halfpage Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage − 175 V I F continuous forward current − 100 mA P tot total power dissipation T s =9 0 °C − 500 mW T stg storage temperature −65 +150 °C T j junction temperature −65 +150 °C BAP64-03 1 cathode 2 anode ELECTRICAL CHARACTERISTICS T j = 2 5 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage I F =5 0m A − 0.95 1.1 V I R reverse leakage current V R = 175 V −− 10 µA V R =2 0V −− 1 µA C d diode capacitance V R =0 ; f=1M H z − 0.48 − pF V R =1V ; f=1M H z − 0.35 --- pF V R =2 0V ; f=1M H z − 0.23 0.35 pF r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 − 20 40 Ω I F = 1 mA; f = 100 MHz; note 1 − 10 20 Ω I F = 10 mA; f = 100 MHz; note 1 − 23 . 8 Ω I F = 100 mA; f = 100 MHz; note 1 − 0.7 1.35 Ω τ L charge carrier life time when switched from I F =1 0m A t o I R =6m A ; R L = 100 Ω; measured at I R =3m A − 1.55 −µ s L S series inductance − 1.68 − nH THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 120 K/W 1 of 3 REV.08

Fig.2 Forward resistance as a function of forward current; typical values. f=1 0 0M H z ; T j =2 5 0.1 100 0.1 1 10 100 I F (mA) r D (Ω) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f=1M H z ; T j =2 5 100 200 300 400 500 048 1 2 1 6 2 0 V R (V) C D (fF) Fig.4 Insertion loss ( S ) of the diode as a function of frequency; typical values. (1) I F = 100 mA.; (2) I F = 10 mA.; (3) I F = 1 mA.; (4) I F =0 . 5m A . Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. T amb =2 5 0.5 1 1.5 2 2.5 3 f (GHz) (dB) (1) (2) (4) (3) Fig.5 Isolation ( |S ) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. T amb =2 5 -30 -25 -20 -15 -10 0.5 1 1.5 2 2.5 3 f (GHz) (dB) 2 of 3 REV.08 BAP64-03

SOD323Plastic surface mounted package; 2 leads 3 of 3 REV.08 D H E Lp A E bp v M A A c (1) v --- --- UNIT b p cD E mm 0.35 0.25 0.10 − 0.00 0.15 0.08 1.40 1.20 1.8 1.6 A 1.0 --- H E 2.7 2.5 Lp 0.40 0.25 DIMENSIONS (mm are the original dimensions) Note 1. The marking bar indicates the cathode. A 1 v 0.90 0.80 BAP64-03