BAP64-02 KEXIN | Alldatasheet
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Technical content
Features
High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Very low series inductance For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 175 V continuous forward current I F 100 mA total power dissipation Ts = 90 Ptot 715 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 85 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit forward voltage V F IF = 50 mA 0.95 1.1 V VR =175 V 10 VR =20 V 1 VR = 0; f = 1 MHz 0.48 VR = 1 V; f = 1 MHz 0.35 VR =2 0V ;f=1M H z 0 . 2 3 0 . 3 5 IF = 0.5 mA; f = 100 MHz; note 1 20 40 IF =1m A ;f=1 0 0M H z ;n o t e1 1 0 2 0 IF =1 0m A ;f=1 0 0M H z ;n o t e1 2 3 . 8 IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 when switched from IF =1 0m At oIR =6m A ; RL = 100 ,measured at IR =3m A series inductance L S 0.6 nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. reverse leakage current I R A diode forward resistance r D pFdiode capacitance C d scharge carrier life time L 1.55 Marking Marking S