BAP63-02 KEXIN | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
High speed switching for RF signals Low diode capacitance Low diode forward resistance Very low series inductance. For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 50 V continuous forward current I F 100 mA total power dissipation T S 90 P tot 715 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 85 K/W
2 www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage V F IF =5 0m A 0 . 9 5 1 . 1 V reverse leakage current I R VR = 35 V 10 nA VR = 0; f = 1 MHz 0.36 VR = 1 V; f = 1 MHz 0.32 VR = 20V; f = 1 MHz 0.25 0.32 IF = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 IF = 1 mA; f = 100 MHz; note 1 1.95 3 IF = 10 mA; f = 100 MHz; note 1 1.17 1.8 IF = 100 mA; f = 100 MHz; note 1 0.9 1.5 VR = 0; f = 900 MHz 15.6 VR = 0; f = 1800 MHz 10.3 VR = 0; f = 2450 MHz 8.3 VR = 0.5; f = 900 MHz 0.19 VR = 0.5; f = 1800 MHz 0.24 VR = 0.5; f = 2450 MHz 0.28 VR =1 ;f=9 0 0M H z 0 . 1 6 VR = 1; f = 1800 MHz 0.20 VR = 1; f = 2450 MHz 0.25 VR = 10; f = 900 MHz 0.10 VR = 10; f = 1800 MHz 0.16 VR = 10; f = 2450 MHz 0.20 VR = 100; f = 900 MHz 0.09 VR = 100; f = 1800 MHz 0.14 VR = 100; f = 2450 MHz 0.18 when switched from IF =1 0m At oIR =6m A ; RL = 100 ;measured at IR =3m A series inductance L S IF = 100 mA; f = 100 MHz 0.6 nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. dB dB dB pF dB dB insertion loss insertion loss insertion loss |s21| |s21|2 |s21|2 |s21|2 |s21|2 isolation insertion loss diode capacitance C d rDdiode forward resistance sLcharge carrier life time 310 Marking Marking K5 BAP63-02