BAP51W SECOS | Alldatasheet
Document overview
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Technical content
Small Signal General Purpose PiN Diode 23-Jan-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. EF B C D A RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Low Diode Capacitance /circle6 Low Diode Forward Resistance MARKING
PACKAGE INFORMATION
(Single diode @ T A = 25° C) Parameter Symbol Ratings Unit Continuous Reverse Voltage V R 60 V Continuous Forward Current I F 50 mA Power Dissipation (TA = 90° C) 715 Power Dissipation PD 150 mW Thermal Resistance from Junction to soldering point R θJS 85 °C / W Junction, Storage Temperature T J, T STG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS
(at Ta = 25 °C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Continuous Reverse Voltage V R 50 - - V I R = 10 µA Forward Voltage V F - - 1.1 V I F = 50mA Reverse Current I R - - 100 nA V R = 50V C D1 1 - 0.4 - V R = 0, f =1MHz C D2 - - 0.55 V R = 1, f =1MHz Diode Capacitance C D3 - - 0.35 pF VR = 5 V, f =1MHz - - 9 I F = 0.5 mA, f =100 MHz - - 6.5 I F = 1 mA, f =100 MHz Diode Forward Resistance 1 r D - - 2.5 Ω IF = 10 mA, f =100 MHz Note: 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0 A 1.50 1.70 D - - B 0.75 0.85 E 0.25 0.35 C 0.70 0.50 F 0.07 0.17 SOD-523
Small Signal General Purpose PiN Diode 23-Jan-2014 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES