BAP51-03 KEXIN | Alldatasheet
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Low diode forward resistance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 50 V continuous forward current I F 50 mA total power dissipation Ts = 90 Ptot 500 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit forward voltage V F IF = 50 mA 0.95 1.1 V reverse voltage V R IR =1 0 A 50 V reverse current I R VR = 50 V 100 nA VR =0 ;f=1M H z 0 . 4 VR =1 V ;f=1M H z 0 . 3 0 . 5 5 VR =5 V ;f=1M H z 0 . 2 0 . 3 5 IF = 0.5 mA; f = 100 MHz; note 1 5.5 40 IF = 1 mA; f = 100 MHz; note 1 3.6 25 IF = 10 mA; f = 100 MHz; note 1 1.5 5 when switched from IF =1 0m At oIR =6m A ; RL = 100 ;measured at IR =3m A Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. pF nsLcharge carrier life time 550 diode forward resistance r D diode capacitance C d Marking Marking A5