BAP51-02 KEXIN | Alldatasheet
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Low diode forward resistance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage V R 50 V continuous forward current I F 50 mA total power dissipation Ts = 90 Ptot 715 mW storage temperature T stg -65 +150 junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 85 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit forward voltage V F IF = 50 mA 0.95 1.1 V reverse voltage V R IR =1 0 A 50 V reverse current I R VR = 50 V 100 nA VR =0 ;f=1M H z 0 . 4 VR =1V ;f=1M H z 0 . 3 0 . 5 5 VR =5V ;f=1M H z 0 . 2 0 . 3 5 IF = 0.5 mA; f = 100 MHz; note 1 5.5 9 IF = 1 mA; f = 100 MHz; note 1 3.6 6.5 IF = 10 mA; f = 100 MHz; note 1 1.5 2.5 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. pF diode capacitance C d rDdiode forward resistance Marking Marking A5