BAP50-03 SKTECHNOLGY | Alldatasheet
Document overview
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Technical content
FEATURES
- Low diode capacitance
- Low diode forward resistance.
APPLICATIONS
- General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD323 small plastic SMD package. 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: A8 handbook, halfpage LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage − 50 V I F continuous forward current − 50 mA P tot total power dissipation T s =9 0°C − 500 mW T stg storage temperature −65 +150 °C T j junction temperature −65 +150 °C BAP50-03
ELECTRICAL CHARACTERISTICS
T j = 2 5°C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage I F =5 0m A − 0.95 1.1 V V R reverse voltage I R =1 0µA5 0 −− V I R reverse current V R =5 0V −− 100 nA C d diode capacitance V R = 0; f = 1 MHz − 0.4 − pF V R = 1 V; f = 1 MHz − 0.3 0.55 pF V R = 5 V; f = 1 MHz − 0.2 0.35 pF r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1− 25 40 Ω I F = 1 mA; f = 100 MHz; note 1− 14 25 Ω I F = 10 mA; f = 100 MHz; note 1− 35 Ω SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 85 K/W 1 of 3 REV.08
Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; T j =2 5°C. handbook, halfpage 11 0 IF (mA) rD (Ω ) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; T j =2 5°C. handbook, halfpage 02 0 VR (V) C d (fF) 500 100 200 300 400 4 8 12 16 Fig.4 Insertion loss (|S ) of the diode as a function of frequency; typical values. handbook, halfpage 0.5 3 f (GHz) S21 (dB) (1) (2) (3) 1.5 2 2.5 (1) I F =1 0m A . (2) I F = 1 mA. (3) I F = 0.5 mA. Diode inserted in series with a 50Ω stripline circuit and biased via the analyzer Tee network. T amb =2 5°C. Fig.5 Isolation (|S ) of the diode as a function of frequency; typical values. handbook, halfpage 0.5 3 f (GHz) S21 (dB) −25 −20 −15 −10 1 1.5 2 2.5 Diode zero biased and inserted in series with a 50Ω stripline circuit. T amb =2 5°C. 2 of 3 REV.08 BAP50-03
mm 0.35 0.25 0.10 − 0.00 0.15 0.08 1.40 1.20 1.8 1.6 A 1.0 --- H E 2.7 2.5 Lp 0.40 0.25 DIMENSIONS (mm are the original dimensions) D H E Lp A E bp Note 1. The marking bar indicates the cathode. A 1 Plastic surface mounted package; 2 leads v M A A c (1) 3 of 3 REV.08 v --- --- v 0.90 0.80 BAP50-03