KAP50-03 KEXIN | Alldatasheet
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Technical content
Features
Low diode capacitance. Low diode forward resistance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Continuous reverse voltage V R 50 V Continuous forward current I F 50 mA Total power dissipation TS =9 0 Ptot 500 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Thermal resistance from junction to soldering point Rth j-s 85 K/W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Forward voltage V F IF = 50 mA 0.95 1.1 V Reverse voltage V R IR =1 0 A 50 V Reverse current I R VR = 50 V 100 nA VR =0 ;f=1M H z 0 . 4 p F VR =1V ;f=1M H z 0 . 3 0 . 5 5 p F VR =5V ;f=1M H z 0 . 2 0 . 3 5 p F IF =0 . 5m A ;f=1 0 0M H z 2 5 4 0 IF =1m A ;f=1 0 0M H z 1 4 2 5 IF =1 0m A ;f=1 0 0M H z 3 5 rD Cd Diode forward resistance Diode capacitance General Purpose PIN Diode KAP50-03(BAP50-03)
2 www.kexin.com.cn Typical Characteristics Tj = 25 ; f = 100 MHz. Tj = 25 ; f = 100 MHz. Diode zero biased and inserted in series with a 50stripline circuit Tamb = 25 . (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 stripline circuit and biased viat analyzer Tee network. Tamb = 25 °C. Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. Fig.3 Insertion loss (|S21|2) of the diode as a function of frequency; typical values. Fig.4 Isolation (|S21|2) of the diode as a function of frequency; typical values. KAP50-03(BAP50-03)