BAL99W KEXIN | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
Very small plastic SMD envelope High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit repetitive peak reverse voltage V RRM 85 V continuous reverse voltage V R 75 V continuous forward current I F 150 mA repetitive peak forward current I FRM 500 mA square wave; Tj =2 5 prior to surge; t=1 s 4 t=1m s 1 t=1s 0 . 5 total power dissipation P tot Tam b =2 5 200 mW Storage temperature range T stg -65 +150 Junction temperature T j 150 thermal resistance from junction to tie-point Rth j-t p 300 K/W thermal resistance from junction to ambient Rth j-a 625 K/W non-repetitive peak forward current I FSM A
2 www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Max Unit IF = 1 mA 715 IF = 10 mA 855 IF =5 0 m A 1 IF = 150 mA 1.25 VR = 25 V 30 nA VR =7 5V 1 A VR =2 5V ,T j =1 5 0 30 A VR =2 5V ,T j =1 5 0 50 A Diode capacitance C d f=1 . 0M H z , VR =0 1 . 5 p F when switched from I F =1 0m At oIR =1 0m A ; RL = 100 ;m e a s u r e da tIR =1m A Forward recovery voltage V fr when switched from I F =1 0m A ;tr =2 0n s 1 . 7 5 V Forward voltage V F 4n s Reverse current I R Reverse recovery time t rr mV V BAL99W Marking Marking JF