BAL99 SKTECHNOLGY | Alldatasheet
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Vg gz x: BS vices BAL99 3 o—>}—o 2 Ae GaTHovE @ MAXIMUM RATINGS Continuous Reverse Voltage Ve 70 Vde 2 Peak Forward Current T 700 made o 4 SOT-23 (TO-236AB) @ DEVICE MARKING BAL99= JF @ THERMAL CHARACTERISTICS. Total Device Dissipation FR 5 Board, (1) 7 = AW Tr= 25°C Derate above 25°C 18 mw Thermal Resistance, Junction to Ambient Raw 556 °CIlw Total Device Dissipation Alumina Substrate, (2) T= 25°C es 300 mw Derate above 25°C 24 mw Thermal Resistance, Junction to Ambient Ran ai7 =CWw Junction and Storage Temperature Taiiline 5510 +150 Ks @ ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic mbol Min Max Unit © OFF CHARACTERISTICS Reverse Voltage Leakage Current Tr ‘Ade (V p= 70 Vde) = 25 (V p= 25 Ve, T y= 150°C) = 30 (Vr= 70 Vde, T y= 150°C) = 50 Reverse Breakdown Voltage (1g= 100 0Adc) Vom bi = = Forward Voltage Vr mV (-= 10 mAdc) - 855 (p= 50 mAdc) - 1000 (= 150 mAde) - 1250 Recovery Current (1-= 10 mAde, V a= 5.0 Vado, R= 5000) Qs bai be Diode Capacitance (V e= 0, f= 1.0 MHz) Co is PF Reverse Recovery Time , = zo fa (lp=1g= 10 mAdc, R= 100 ©, measured at | ,= 1.0 mAdc) " : Forward Recovery Voltage Vex = a76 Wie (1-= 10 mAde, t = 20 ns) REV.08 1 of 2
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Figure 1. Forward Voltage Figure 2. Leakage Current
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Figure 3. Capacitance