BAL99 GWSEMI | Alldatasheet
Document overview
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Technical content
Plastic-Encapsulate Diodes SWITCHING DIODE
FEATURES
z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance Marking: JF ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Max Unit Reverse breakdown voltage V (BR) I R = 100µA 70 V Reverse voltage leakage current I R V R =70V 2.5 µA Forward voltage V F I F =1mA I F =10mA I F =50mA I F =150mA 0.715 0.855 1.25 V Diode c apacitance C D V R =0, f=1MHz 1.5 pF Reveres recovery time t rr I F R =10mA,R L =100Ω, I rr =0.1×I R 6 nS SOT-23 JF Maximum Ratings @Ta=25℃ Non-Repetitive Peak Reverse Voltage V RM 70 V DC Blocking Voltage V R 70 V Average Rectified Output Current I O 100 mA Power Dissipation P D 225 mW Junction Temperature T J 150 ℃ Forward Surge Current @t=8.3ms I FSM A Non-Repetitive Peak Parameter Symbol Limit Unit Storage Temperature Range T STG -55~+150 ℃ Thermal Resistance from Junction to Ambient R θJA ℃/W 556 2.0 AL99 B
0.1 100 0 204 06 08 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 300 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Forward Characteristics Reverse Characteristics Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) AL99 B
Plastic surface mounted package; 3 leads SOT-23 AL99 B