BA592 KEXIN | Alldatasheet
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Technical content
Features
Low diode forward resistance Small inductance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Continuous reverse voltage V R 30 V Continuous forward current I F 100 mA Total power dissipation P tot Ts = 90 500 mW Storage temperature T stg -65 +150 Junction temperature T j -65 +150 thermal resistance from junction to soldering point R th j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F IF =1 0m A 1 V Reverse current I R VR = 20 V 20 nA VR = 1 V; f = 1 MHz;note 1 0.92 1.4 VR = 3 V; f = 1 MHz;note 1 0.6 0.85 1.1 IF = 3 mA; f = 100 MHz;note 1 0.45 0.7 IF = 10 mA; f = 101 MHz;note 1 0.36 0.5 Reverse resistance 1/gp V R = 1 V; f = 100 MHz;note 1 100 K Series inductance Ls 2 nH Note 1.Guaranteed on AQL basis; inspection level S4, AQL 1.0. pF Diode capacitance C d rDDiode forward resistance Marking Marking A2