BA481 PHILIPS | Alldatasheet
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Technical content
Product specification File under Discrete Semiconductors, SC01
1996 Mar 19
ook, halfpage M3D050
1996 Mar 19 2
Philips Semiconductors Product specification UHF mixer diode BA481
FEATURES
- Low forward voltage
- Hermetically-sealed leaded glass package
- Low diode capacitance.
APPLICATIONS
- UHF mixer
- Sampling circuits
- Modulators
- Phase detection.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. Fig.1 Simplified outline (SOD68; DO-34), and symbol. handbook, halfpage MAM193 k a Cathode indicated by a grey band. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 4V IF continuous forward current − 30 mA Tstg storage temperature −65 +125 °C Tj junction temperature − 100 °C
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Philips Semiconductors Product specification UHF mixer diode BA481
ELECTRICAL CHARACTERISTICS
Tamb =2 5°C unless otherwise specified. Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif= 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS Note 1. Refer to SOD68 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF =1m A 450 mV IF =1 0m A 600 mV IR reverse current V R = 4 V; see Fig.3 10 µA VR =4V ; Tamb =6 0°C; see Fig.3100 µA rs series resistance f = 1 kHz; I F =5m A 1 3 Ω F noise figure f = 900 MHz; note 1 8 dB C d diode capacitance f = 1 MHz; V R = 0 V; see Fig.4 1.1 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 320 KW
1996 Mar 19 4
Philips Semiconductors Product specification UHF mixer diode BA481 GRAPHICAL DATA Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 100°C. (2) Tamb =6 0°C. (3) Tamb =2 5°C. (4) Tamb = −40 °C. handbook, halfpage 0.80 0.2 0.4 (mA) IF MGC684 10 −1 0.6 VF (V) (3) (2) (1) (4) (1) Tamb = 100°C. (2) Tamb =6 0°C. (3) Tamb =2 5°C. (4) Tamb = −40 °C. handbook, halfpage10 (nA) IR 103 102 10 −1 (1) VR (V) 210 MGC685 (4) (3) (2) Fig.3 Reverse current as a function of reverse voltage; typical values. Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz. 0.25 0.50 0.75 1.00 01234 MGC683 C d (pF) VR (V)
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Philips Semiconductors Product specification UHF mixer diode BA481 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Fig.5 SOD68 (DO-34). Dimensions in mm. The grey marking band indicates the cathode. handbook, full pagewidth 1.6 max 25.4 min 25.4 min3.04 max 0.55 max MSA212 - 1