BA277 WEITRON | Alldatasheet

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http://www.weitron.com.tw WEITRON BA277 BAND SWITCHING DIODE 100m AMPERES

35 VOLTS

  • Surface Mount Band-Switching Circuits. * Low Loss Band Switching in VHF Television Tuners. * Low Diode Capacitance : 1.2 pF(Max) * Low Diode Forward Resistance : 0.9Ω(Max) * Small Surface Mounting Type. * High Reliability. Applications: Features: RF Band Switching Diode Dim A B C D E J K Min 1.10 0.70 0.50 0.25 0.15 0.07 1.50 Max 1.30 0.90 0.70 0.35 0.25 0.20 1.70 SOD-523 P IN 1. CATHODE 2. ANODE SOD-523 Outline Dimensions SOD-523 Lead(Pb)-Free Pb 1/3 08-Dec-05

MaximumRatings (Ta=25˚C Unless otherwise noted) Characteristic DC Reverse Voltage DC Forward Current Operating junction Temperature Range Storage Temperature Range Symbol VR IF TJ Tstg Value Unit 100 -55 to +1 125 V mA DeviceMarking Item Marking EqivalentCircuitdiagram ElectricalCharacteristics (TA=25 ˚C Unless otherwise noted) http://www.weitron.com.tw Characteristic Symbol Forward Voltage IF=10mA VF IR Min Max Unit V nA10 1.2 BA277 1 Typ Reverse current VR=25V Capacitance between terminals VR=6V, f=1MHz Forward operating resistance IF=2mA, f=100MHz CT Rf - 1.0 - - 0.9 pF Ω BA277 2/3 08-Dec-05

3/3 08-Dec-05http://www.weitron.com.tw WEITRON 100m 10m 100 100n I : TNERRUC DRAWROF F( )Am FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics 0 10 20 30 40 50 0.1 1.0 10.0I : TNERRUC ESREVER R ( )An REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics 10 20 30 REVERSE VOLTAGE : V R (V) C : SLANIMRET NEEWTEB ECNATICAPAC T ( )Fp Fig. 3 Capacitance between terminals characteristics f=100MHz 1 2 5 10 0.2 0.5 1.0 : ECNATSISER GNITAREPO DRAWROF R f ( ) FORWARD CURRENT : IF (mA) Fig. 4 Forward operating resistance characteristics Electrical characteristic curves (TA=25°C) Ω