BA243A SEMTECH | Alldatasheet
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BA243A, BA244A Silicon Epitaxial Planar Diode Switches T for electronic band-switching in radio and TV tuners in the 2 | frequency range of 50 ... 1000 MHz. The dynamic forward B resistance is constant and very small over a wide range of € frequency and forward current. The reverse capacitance is also [> mex 1.90 small and largely independent of the reverse voltage. xo ES = These diodes are delivered taped. TF) sainose Details see "Taping". 2 i max. 0.528 Glass case JEDEC DO-35
54 A 2 according to DIN 41 880
Weight approx. 0.13 g Dimensions in mm Absolute Maximum Ratings (T,= 25°C) Storage Temperature Range -55 to + 150 (@=)) SEMTECHELECTRONICSLTD. @ SEEZZ, ——C sholy owned subsiiary of HOMEY TECHAGLOBY LTD. ) bear
BA243A, BA244A Characteristics at Tap =25 °C eS Forward Voltage Vv, Vv atl, = 100 mA Leakage Current at V, = 20 V nA at V, = 15 V, T,,, = 60°C HA Dynamic Forward Resistance at f = 50 to 1000 MHz, |, = 10 mA BA243A 07 Q BA244A 0.4 Q Relative Variation of Dynamic Forward Resistance Ar 100 with the Variation of Forward Current in the Range of | _! %imA |, =2to 40 mA tr: dh Capacitance C., 1.8 pF atV,=3V, f= 1MHz Relative Variation of Capacitance with the Variation AC... 100 of Reverse Voltage in the Range of V, = 7 to 20 V, — 1 LIN f= 100 MHz Cava [Series inductance across Case] | TTT Capacitance Dynamic forward resistance versus reverse voltage versus forward current pF BA 263A,BA 244A Q BA 243A,BA 244A 5 10 F=TTITL1 ‘ee 4 , oe LON TT OO 1 RHE Neg Ne NE
2 BA 243A
BN \\ BNEEREERE AEN \\ PNT 7 SSN IN cel BA2GA SLT TTY FCOoENN ae SS N | “THT Th COO HAT Or os 12 s W 2 5 Ko Yo2 aes 10 2 345 100mA --— ip eI @ SEMTECH ELECTRONICS LTD. SEZ, ( wholly owned sbsisiary of HOMEY TECHYDLOEY LTD. ) ae