BA217 FAIRCHILD | Alldatasheet
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- . ae Cf . - . FAIRCHILD SEMICONDUCTOR . a4 Depp syee74 Oo27285 6 I . ec BA217/BA218 7-0/-0% ; | BBcnumpergerCompeny, General Purpose Diodes | . > *WIV...10Vto100V ~ : : . PACKAGES - | 7 BA218 . DO-35 : ABSOLUTE MAXIMUM RATINGS (Note 1) - : . Po . Temperatures 7 : Storage Temperature Range: -85°C to +200°C - . Maximum Junction Operating Temperature H7°C ) : Lead Temperature i : 260°C = . : : { * Power Dissipation (Note 2) . an - - 0 t pe Maximum Total Power Dissipation at 25°C Ambient 600 mw 1 : Maximum Voltage and Currents : : : i WIV Working inverse Voltage =. BA218. «GOV. BAZIT= «SOV | ' ip Continuous Forward Current 100mA 7 vad . V7 Peak Repetitive Forward ~~ . st Current a 300 mA i ieurge) Peak Forward Surge Current 400mA : - Pulse Width = 18 : OA. : | “loos Pulse Width = 1 ys 40A °°. Poe, | i ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) 7 | SYMBOL] CHARACTERISTIC [san [mac [UNS] TEST CONDITIONS : : VE Forward Voltage Ip = 100 mA 1 1.60 Ip = 60 mA | . | Ip = 16 mA 1.00 Ip = 10 mA .. H - Ip=3.0mA ~ a t 0.70 Ip = 1.0mA : i; : Ip =O.2mA - : : IR Reverse Current tA |Va=t0ov- : BA217 60 | oA | VR=10V . BAZIB 60 | 0A | Vp=26V ‘ BA217 ~ 200 | nA | Va=30V . : BA21B 200 | nA | Va=60V . . nA | VR=50V . . i nA | Va = 100V - . {> @___[eapactance [80 [or [vaste rms ; . tr Reverse Recovery Time Ig = 10 mA, Ip = 60 mA : : Ry = 1002 (Note 3) : foe ig = 80 mA, Ip = 80 mA : 7 . . Ry = 100 9 (Note 4) . 1 forms: : i {. These ratings are nag value above which the sericeubily of he diode may be inpared * 2! These are atendy alate int, The factory ahold be conesleg on eppleains tvclingpulued or low dey-oycle operation, 3 Recovery tog = 1 mA. : : 4 Recovery top = 3A. : “ : 6: For product iy cheactaiatc curves, rte to Chapter 4,04 tot : SS a A 1 . 34