B688

2SB688_15 UTC | Alldatasheet

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Technical content

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 www.unisonic.com QW-R214-007,A HIGH POWER AMPLIFIER APPLICATION

FEATURES

• Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO -120 V Collector-Emitter Voltage V CEO -120 V Emitter Base Voltage V EBO -5 V Collector Current I C -10 A Base Current I B -1 A Collector Power Dissipation (TC=25℃) PC 80 W Junction Temperature T J 150 ℃ Storage Temperature Range T STG -40 ~ +150 ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current I CBO V CB = -120V, IE = 0 -10 µA Emitter Cut-off Current I EBO V EB = -5V, IC = 0 -10 µA Collector-Emitter Breakdown Voltage V (BR)CEO I C = -50mA, IB= 0 -120 V DC Current Gain h FE V CE = -5V, IC = -1A 55 160 Collector-Emitter Saturation Voltage V CE(sat) I C = -5A, IB = -0.5A -2.5 V Base-Emitter Voltage V BE V CE = -5A, IC= -5A -1.5 V Transition Frequency f T V CE = -5A, IC= -1A 10 MHz Collector Output Capacitance C ob V CB = -10V, IE = 0, f=1MHz 280 pF CLASSIFICATION OF hFE RANK R O RANGE 55 ~ 110 80 ~ 160

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 www.unisonic.com QW-R214-007,A TYPICAL CHARACTERISTICS 0 240 COLLECTOR POWER DISSIPATION, P C (W) AMBIENT TEMPERATURE, Ta (℃) PC - Ta 100 200 120 16040 80 (1) (2) (3) (4) (5) (1)Ta=Tc INFINITEHEATSINK (2)300×300×2mm A1 HEAT SINK (3)200×200×2mm A1 HEAT SINK (4)100×100×2mm A1 HEAT SINK (5)NO HEAT SINK --12-10 -14 COLLECTOR CURRENT, IC (A) COLLECTOR EMITTER VOLTAGE, VCE (V) IC - VCE -10 0- 2 -4 -6 -8 COMMON EMITTER TC=25℃ -200mA -50mA -400mA 0mA -300mA IB= -20mA -100mA COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat) (V) -0.1 -10 -100 COLLECTOR CURRENT, IC (A) COLLECTOR EMITTER VOLTAGE, VCE (V) -300 SAFE OPERATING AREA -1 -30-3 -30 -0.3 -0.5 -10 IC MAX. (PULSED)※ IC MAX (CONTINUOUS) ※SINGLE NONREPETITIVE PULSE TC=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. VCEO MAX t=1ms※ t=10ms※ t=100ms※ t=500ms※DC OPE RATION TC=25℃ -10 COLLECTOR CURRENT, IC (A) VCE(sat) - IC -0.5 -0.3 -0.05 -0.1 -0.03 -0.01 TC=25℃ TC=-25 ℃ TC=100 ℃ COMMON EMITTER IC/IB=10 -0.01 DC CURRENT GAIN, hFE COLLECTOR CURRENT, IC (A) hFE - IC 300 100 -0.03 -0.1 -0.3 -1 500 -3 -10 TC=100℃ TC=25℃ TC= -25℃ COMMON EMITTER VCE=-5V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.