B60NH02L

STB60NH02L_04 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET ■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V ■ RDS(ON) * Qg INDUSTRY’s BENCHMARK ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED ■ LOW THRESHOLD DEVICE ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

The STB60NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES TYPE VDSS RDS(on) ID STB60NH02L 24 V < 0.0105 Ω 60 A D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM

Ordering Information

SALES TYPE MARKING PACKAGE PACKAGING STB60NH02LT4 B60NH02L TO-263 TAPE & REEL Symbol Parameter Value Unit Vspike(1) Drain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at T C = 25°C 60 A ID Drain Current (continuous) at T C = 100°C 43 A IDM(2) Drain Current (pulsed) 240 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.47 W/°C EAS (3) Single Pulse Avalanche Energy 280 mJ Tstg Storage Temperature -55 to 175 °CTj Max. Operating Junction Temperature

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (4) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.14 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 24 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 20 V VDS = 20 V T C = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 11 . 8 2 . 5V RDS(on) Static Drain-source On Resistance VGS = 10 V I D = 30 A VGS = 5 V I D = 15 A 0.0085 0.012 0.0105 0.020 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (4) Forward Transconductance VDS = 15 V I D =2 5 A 27 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz VGS = 0 1400 400 pF pF pF RG Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain Ω

(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area (5) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A (3) Starting Tj = 25 oC, ID = 25A, VDD = 15V Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V I D = 30 A RG =4 . 7 Ω V GS = 10 V (Resistive Load, Figure 3) 130 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 10 V ID= 60 A VGS= 10 V 24 3.4 32 nC nC nC Qoss(5) Output Charge VDS= 16 V VGS= 0 V 9.4 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 10 V I D = 30 A RG =4 . 7Ω, V GS = 10 V (Resistive Load, Figure 3) 16 21.6 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Source-drain Current Source-drain Current (pulsed) 240 A A VSD (4) Forward On Voltage ISD = 30 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A di/dt = 100A/µs VDD = 18 V T j = 150°C (see test circuit, Figure 5) ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . .

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 4° 0° 4° D2PAK MECHANICAL DATA

DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D2PAK FOOTPRINT TAPE MECHANICAL DATA

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