B5819WS-1A-SOD-323 DGNJDZ | Alldatasheet
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Technical content
SOD-323 Plastic-Encapsulate Diode s B5817WS-5819WS SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol B5817WS B581 8WS B581 9WS Unit Non-repetitive peak reverse voltage V RM 20 30 40 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage V RRM V RWM V R 20 30 40 V RMS reverse voltage V R(RMS) 14 21 28 V Average rectified output current I O 1 A Repetitive peak forward current I FRM 1.5 A Power dissipation Pd 250 mW Thermal resistance junction to ambient R θJA 400 ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwis e specified) Parameter Symbol Te st conditions M in Max Unit Reverse breakdown voltage V (BR) I R = 1mA B5817WS B5818WS B5819WS V Reverse voltage leakage current I R V R =20V B5817WS V R =30V B5818WS V R =40V B5819WS mA B5817WS I F =1A I F =3A 0.45 0.75 V B5818WS I F =1A I F =3A 0.55 0.875 V Forward voltage V F B5819WS I F =1A I F =3A 0.6 0.9 V Diode capacitance C D V R =4V, f=1MHz 120 pF SOD-323 Storage temperature T STG - 55~+150 ℃ Junction temperature TJ 125 ℃
1 E,Mar,2015
MARKING: B5818WS:SK B5819WS:SLB5817WS:SJ The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. 1RQUHSHWLWLYH3HDNForward 6XUJH&urrent #W PV I FSM 9 A DONGGUAN NANJING ELECTRONICS LTD.,
0.01 0.1 01 0 2 0 3 0 4 0 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (A) T a =25 T a T a =75 Reverse Characteristics REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (mA) T a =25 T a =100 Typical Characteristics
2 E,Mar,2015
SOD-323 Suggested Pad Layout