B5817WS DSK | Alldatasheet
Document overview
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Technical content
FEATURES
F z Low stored change,majority carrier conduction. z Low power loss/high efficient
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters. SOD-323 z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No. Marking Package Code B5817WS SJ SOD-323 B5818WS SK SOD-323 B5819WS SL SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817WS B5818WS B5819WS Unit Non-Repetitive Peak reverse voltage V RM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage V RRM V RWM V R 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified output Current I o 1 A Peak forward surge current@=8.3ms I FSM 25 A Repetitive Peak Forward Current I FRM 625 mA Power Dissipation P d 250 mW Thermal Resistance Junction to Ambient R θJA 500 ℃/W Storage temperature T STG -65~+150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition MIN MAX UNIT Reverse breakdown voltage V (BR) I R =1mA B5817WS B5818WS B5819WS V Reverse voltage leakage current I R V R = 2 0 V B 5 8 1 7 W S V R = 3 0 V B 5 8 1 8 W S V R = 4 0 V B 5 8 1 9 W S 1 mA B5817WS I F =1A I F =3A 0.45 0.75 B5818WS I F =1A I F =3A 0.55 0.875 Forward voltage V F B5819WS I F =1A I F =3A 0.6 0.9 V Diode capacitance C D V R =4V,f=1MHz 120 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Plastic surface mounted package SOD-323 SOD-323 Dim Min Max A 1.275 1.325 B 1.675 1.725 C 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J 0.1 Typical K 2.6 2.7 All Dimensions in mm E K H D C B A J www.diode.kr Diode Semiconductor Korea
Unit : mm
PACKAGE INFORMATION
B5817WS-B5819WS SOD-323 3000/Tape&Reel www.diode.kr Diode Semiconductor Korea