B5817W JIANGSU | Alldatasheet

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  1. 70 3. 70 0. 55 1. 05 1. 6 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W SCHOTTKY BARRIER DIODE FEATURES： Power dissipation PD : 450 mW（Tamb=25℃） Collector current IF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ MARKING：SJ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 1mA V Reverse voltage leakage current IR VR=20V mA Forward voltage VF IF=1A IF=3A 0.45 0.75 V Diode capacitance CD VR=4V f=1MHz 120 pF Unit：mm SOD- 123

c b D 0.20 E A L SOD-123 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E L θ Min 1.050 0.000 1.050 0.450 0.080 1.500 2.600 3.550 0.250 Max 1.250 0.100 1.150 0.650 0.150 1.700 2.800 3.850 0.450 Min 0.041 0.000 0.041 0.018 0.003 0.059 0.102 0.140 0.010 Max 0.049 0.004 0.045 0.026 0.006 0.067 0.110 0.152 0.018 Dimensions In Millimeters Dimensions In Inches 0.020REF 0.500REF θ