B5817W SSC | Alldatasheet
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Technical content
08/04/2007 Rev.1.00 www.SiliconStandard.com 1 B5817W-B5819W PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode
FEATURES
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W: SK B5819W: SL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @TA=25 oC Pb-free; RoHS-compliant SOD-123 Parameter Symbol B5817W B581 8W B581 9W Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Output Current IO 1 A Peak forward surge current @=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 250 mW Thermal Re sistance Junction to Ambient RθJA 500 K/W Storage temperature TSTG -65~ +150 ℃
08/04/2007 Rev.1.00 www.SiliconStandard.com 2 B5817W-B5819W ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Symbol Test c onditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 1mA B5817W B581 8W B5819W V Reverse voltage leakage current IR VR=20V B581 7W VR=30V B581 8W VR=40V B581 9W 1 mA B5817W I F=1A IF=3A 0.45 0.75 V B5818W I F=1A IF=3A 0.55 0.875 V Forward voltage VF B5819W I F=1A IF=3A 0.6 0.9 V Diode capacitance CD V R=4V, f=1MHz 120 pF
08/04/2007 Rev.1.00 www.SiliconStandard.com 3 TYPICAL CHARACTERISTICS B5817W-B5819W
08/04/2007 Rev.1.00 www.SiliconStandard.com 4 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.