DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
WEJ ELECTRONIC CO.,LTD B 5817W 2.70 3.70 0.55 1.05 1.6 B5817W SCHOTTKY BARRIER DIODE FEATURES： Power dissipation P D : 450 m W（Tamb=25℃） Collector current IF: 1 A Collector-base voltage VR: 20 V Oper ating and storage junction temperature range T J，Tstg: -55℃ to +150 ℃ MARKING：SJ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V (BR) I R = 1mA V Reverse voltage leakage current I R V R 20V mA Forward voltage V F I F I F 0.45 0.75 V Diode capacitance C D V R 4V f=1MHz 120 pF Unit：mm SOD-123 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS
WEJ ELECTRONIC CO.,LTD B 5817W Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS
WEJ ELECTRONIC CO.,LTD B 5817W c b D 0.20 E A1 A2 A E1 L Symbol A b c D E L θ Min 1.050 0.000 1.050 0.450 0.080 1.500 2.600 3.550 0.250 Max 1.250 0.100 1.150 0.650 0.150 1.700 2.800 3.850 0.450 Min 0.041 0.000 0.041 0.018 0.003 0.059 0.102 0.140 0.010 Max 0.049 0.004 0.045 0.026 0.006 0.067 0.110 0.152 0.018 Dimensions In Millimeters Dimensions In Inches 0.020REF0.500REF θ Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS