B5817W GXELECTRONICS | Alldatasheet

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Technical content

特 性(FEATURES)： ◆ Extremely low VF. ◆Low stored change,majority carrier conduction. ◆Low power loss/high efficient ◆For Use In Low Voltage, High Frequency Inverters. ◆Free Wheeling, And Polarity Protection Applications. MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage VRSM 24 36 48 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Output Current IO 1 A Peak Forward Surge Current @=8.3ms IFSM 25 A Power Dissipation Pd 250 mW Thermal Resistance Junction to Ambient RθjA 80 ℃/W Storage Temperature Tj,Tstg -65 to +125 ℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test Conditions MIN MAX Unit Reverse breakdown voltage V(BR) IR=1mA B5817W B5818W B5819W V Reverse voltage leakage current IR VR=20V B5817W VR=30V B5818W VR=40V B5819W 1 mA B5817W IF=1A IF=3A 0.45 0.75 B5818W IF=1A IF=3A 0.55 0.875 Forward voltage VF B5819W IF=1A IF=3A 0.6 0.9 V Diode capacitance CD VR=4V,f=1MHz 120 pF

ORDERING INFORMATION

Type No. Marking Package Code B5817W SJ SOD-123 B5818W SK SOD-123 B5819W SL SOD-123 B5817W-B5819W

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified