B5817W DSK | Alldatasheet
Document overview
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Technical content
FEATURES
F z Low stored change,majority carrier conduction. z Low power loss/high efficient
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters. SOD-123 z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No. Marking Package Code B5817W SJ SOD-123 B5818W SK SOD-123 B5819W SL SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage V RSM 24 36 48 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage V RRM V RWM V R 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified output Current I o 1 A Peak forward surge current@=8.3ms I FSM 25 A Power Dissipation P d 250 mW Thermal Resistance Junction to Ambient R θJA 80 ℃/W Storage temperature T J STG -65~+125 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition MIN MAX UNIT Reverse breakdown voltage V (BR) I R =1mA B5817W B5818W B5819W V Reverse voltage leakage current I R V R =20V B5817W V R =30V B5818W V R =40V B5819W 1 mA B5817W I F =1A I F =3A 0.45 0.75 B5818W I F =1A I F =3A 0.55 0.875 Forward voltage V F B5819W I F =1A I F =3A 0.6 0.9 V Diode capacitance C D V R =4V,f=1MHz 120 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
www.diode.kr Diode Semiconductor Korea
Plastic surface mounted package SOD-123 SOD-123 Dim Min Max A 1.4 1.8 B 2.55 2.85 C 1.15 Typical D 0.5 0.6 E 0.3 0.4 H 0.02 0.10 J 0.1 Typical K 3.55 3.85 All Dimensions in mm SOLDERING FOOTPRINT Unit: mm
PACKAGE INFORMATION
B5817W-B5819W SOD-123 3000/Tape&Reel K J H E D C A B www.diode.kr Diode Semiconductor Korea