B5817W AITSEMI | Alldatasheet
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Technical content
AiT Semiconductor Inc. www.ait-ic.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE REV1.0 - MAR 2015 RELEASED - - 1 - DESCRIPTION FEATURES The B5817W~B5819W are available in SOD-123 package For use in low voltage, high frequency inverters Freewheeling, and polarity protection
applications
Available in SOD-123 package ORDERING INFORMATION MECHANICAL DATA Package Type Part Number SOD-123 B5817W B5818W B5819W Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case
AiT Semiconductor Inc. www.ait-ic.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE REV1.0 - MAR 2015 RELEASED - - 2 - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single diode @ TA=25°C Parameter Symbol B5817W B5818W B5819W Unit Peak Repetitive Peak Reverse Voltage Working peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Output Current IO 1.0 A Peak Forward Surge Current @8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation PD 250 mW Thermal Resistance Junction to Ambient RθJA 500 K/W Storage Temperature TSTG -65 ~150 °C Non-Repetitive Peak Reverse Voltage VRM 20 30 40 V ELECTRICAL RATINGS @ TA=25°C Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Breakdown Voltage V(BR) IR=1mA B5817W 20 V B5818W 30 B5819W 40 Reverse Voltage Leakage Current IR VR=20V B5817W 1 mA VR=30V B5818W VR=40V B5819W Forward Voltage VF IF=1A IF=3A B5817W 0.45 0.75 V B5818W 0.55 0.875 B5819W 0.6 0.9 Diode Capacitance CD VR=4V, f=1.0MHz 120 pF
AiT Semiconductor Inc. www.ait-ic.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE REV1.0 - MAR 2015 RELEASED - - 3 - TYPICAL CHARACTERISTICS Figure. 1 Forward Current Derating Curve Figure. 2 Maximum Non-Repetitive Peak Forward Surge Current Figure. 3 Typical Instantaneous Forward Characteristic Figure. 4 Typical Reverse Characteristics Figure. 5 Typical Junction Capacitance Figure. 6 Typical Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE REV1.0 - MAR 2015 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOD-123 (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE REV1.0 - MAR 2015 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.