B520C DSK | Alldatasheet
Document overview
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Technical content
3.1± 0.25 6.9± 0.25 5. 9 ± 0. 25 2. 3 ± 0. 15 1. 3± 0. 25 0.203MAX 7.8± 0. 2 0.25± 0.06
FEATURES
MAXIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified B540C B550C B560C Maximum recurrent peak reverse voltage V RRM 40 50 60 V Max imum RMS v oltage V RWS 28 35 42 V Maximum DC blocking voltage V DC 40 50 60 V Maximum average forw ord rectified current at c T L (SEE FIG.1) (NOTE 2) I (AV) A Peak forw ard surge current 8.3ms single half- c sine-w ave superimposed on rated load(JEDEC c Method) I FSM A Maximum instantaneous forw ard voltage at v 5.0A(NOTE.1) V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage(NOTE1) @T A =100 o C R θ JA R θ JL Operating junction and storage temperature range T STG o C Storage temperature range T J o C 0.5 50.0 10.0 I R NOTE: 1.Pulse test:300 μS pulse width,1%duty cy cle B520C-B560C )copper pad areas REVERSE VOLTAGE: 20 --- 60 V CURRENT: 5.0 A ◇ Built-in strain relief ◇ Case:JEDEC DO-214AB,molded plastic over 1111pass ivated chip ◇ Low power loss,high effciency ◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
Typical thermal resitance (NOTE2) o C/W B530C ◇ High temperature soldering guaranteed:250 o C/10 1 11 seconds at terminals B520C ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.007 ounces, 0.21 gram mA UNITS DO - 214AB(SMC) ◇ Low profile package ◇ For surface mounted applications 14 21 ◇ Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 ◇ High current capability,low forward voltage drop 175.0 5.0 ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection -65--- +150 0.50 0.70 ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability Dimensions in millimeters BARRIER RECTIFIERS SURFACE MOUNT SCHOTTKY Diode Semiconductor Korea www.diode.kr
2.0 4.0 60 70 80 90 100 110 120 130 140 150 160 6.0 8.0 B520C-B540C B550C-B560C P.C.B.MOUNTED ON COPPERPAD AREAS 0.01 0.1 10.0 1.4 30.0 1.6 T J =125 C T J =150 C T J =25 C Puise Width=300 S 1%DUTY CYCLE B520C-B540C B550C-B560C O O O T J =125 C T J =25 C T J =75 C B520C-B540C B550C-B560C 0.001 0.01 0.1 200 4 06 08 0 1 0 0 T J =25 C f=1.0MHz Vsig=50mVp-p B520C-B540C B550C-B560C O 1000 100 1000.1 1.0 10 0.1 0.1 1 100 100 0.01 AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES REVERSE VOLTAGE,VOLTS PULSE DURATION,SEC FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE O C/W JUNCTION CAPACLTANCE pF NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, ％ AMBIENT TEMPERATURE ℃ B520C-B560C FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT 200 0 15 10 125 100 150 175 50 100 T J J MAX. 8.3ms Single Half Sine-Wave (JEDEC Method) www.diode.kr Diode Semiconductor Korea