2SB546A NEC | Alldatasheet
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CTO gi ABU MRE PROS UR MST AORN LO UEEY, CTeU ETERS EMRE REE Sta ee SILICON POWER TRANSISTORS -2SB546A,547A/2SD401A,402A VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS
DESCRIPTION
The 2SB546A (PNP), 2SD401A (NPN), 2SB547A (PNP), and 2SD402A (NPN) are high voltage triple diffused silicon transis- tors. These devices are designed for use in line-operated color TV vertical deflection of complementary symmetry circuit. 2SB546A and 2SD401A are complementary transistors, consisting of straight leads. 2SB547A and 2SD402A consist of emitter and base leads for insertion into TO-66 sockets. QUICK REFERENCE DATA a _ - 2SB546A, 2SB547A 2SD401A, 2SD402A_ Collector-emitter voltage (open base) Vceo MAX 150 150 v Collector current (peak value) lom MAX. 3 3 A Total power dissipation up to To gce = 25°C Prot MAX. 30 30 Ww D.C. Current gain Ig = -0.4/0,4A, Veg = -10/10V hee MIN. 40 40 MECHANICAL DATA {Dimensions in mm) 2SB546A, 2SD401A 2SB547A, 2SD402A seseuth a 10.66MAX. 4.82MAX et (4 hrss02 1 pSx08 1.3402 roa z TTA Fs : 4 5
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§ osso2 ae 4 | i | |} 1 3 3 oar ed dk tos ° 13-pl Te | 1. Base a3 1. base 494 2. Collector 0.8234 1 2 3. Emitter aay aT 3. Emitter T 4. Fin {5.08) 4. Collector Nippon Electric Co.Ltd © 1976 NEC Corporation
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Voltages (Tamb = 25°C) 2SB546A, 2SB547A | 2SD401A, 2SD402A Collector-base voltage (open emitter) Veso MAX. -200 200 v Collector-emitter voltage (open base) Veeo MAX. -150 150 v Emitter-base voltage (open collector) Veso MAX. 5.0 5.0 v Currents (Tamb = 25°C) Collector current (peak value) lom MAX. -3.0 3.0 A Base current (peak value) lem Max. 15 15 A Power dissipation HH Total power dissipation at Tease = 25°C Prot MAX. 30 w TEMPERATURES Storage temperature Tstg -65 to +150 *c Junction temperature Tj 180 c THERMAL RESISTANCE from junction to case Reh j-case 4.16 °c from junction to ambient in free air Rin je 78 °c ELECTRICAL CHARACTERISTICS (Temp = 25°C) Collector cut-off current_ 2SB546A, 2SB547A,/2SD401A, 20402A le = 0, Veg = -150/150V, leBo < -50/50 HA Emitter cut-off current Vee = -4.0/4.0V, Ic =0 leBo < -50/50 HA 0.C. current gain Collector-emitter saturation voltage Transition frequency Vee = -10/10V, Ie = -0.4/0.4A fr TYP. "7 MHz Collector capacitance Vee = -10/10V, f = 1.0MHz, Ie = 0 Co TYP. 75/45 pF
Tease (°C) TYPICAL CHARACTERISTICS (Tamb = 25°C) 2SB546A, 2SB547A 2S8D401A, 2804024 lc (a) “016 ee wo eee - 72 seen Ato | (Se | Yar tet er ost Poot ol MLL ee 2=—ss0nee (Poe 7) /a=>- see od poe ~o2f pb fun —ana fT YY Ao ratty yyy EE CPE tel TET] Cee rer rr 0 =2 -4 -6 -8 —10 0 2 4 6 8 10 Ver (V) Ver (V) «ow rT eT TTT) i con DTT TT AS of (7 eraneee ee Were ob eee caser sees eee Weer et 766>=a00ne — 40 = r a cac>_ ase ese —.en tL Leet (sce ae atom tT] ee Fett trol TT | Ee ol | 0 —40 —80 —120 -160 —200 0 40 80 120 160 200 Vee (V) Vee (V)
2SB546A, 547A 2SD401A, 2SD402A Ear ace Fo ce oot rrr rn Pulsed ai rT Pulsed Eo oom | Pe con ro 100| dace | roo zener | LI Co Tn SS ae Pit ese anti rit NTT Stee | eA ICH rne—-H LETT TT | ASTI TEL LCE TM TTT -1 —10 -100 -1000 —10000 -1 -10 —100 —1000 —10000 tc (mA) Ic (mA) . SS a =10- oe et | 10. ote ni zoo ea hor ro iis MDE DY MET rok TTI Z TT) ed meee meee wey imeemaiii oe Secstnes st iaeep Ameer SE eal mail eee Ae ~or EAT on UT PE SSeS: = aeess: ae et ee ee Semssiie ad teatime Sesh Sactileesenicieemeris Corn Cotte ~ooslL LU UIT TOT TT 001 Cott cn a -1 —10 —100 —1000 —10000 1 10 100 1000 —10000 Vc (mA) le (mA) [ital Ge op ssnrrcies essai es eet poe NX mei 2. Nea Hl og EPH Rei Pye ANE SEE ce a NF as a as | Sc a Wiry ren marina H Till alumna sani Sesser stile peat! Face “00 Gina sol it HAT -1 —10 —100 — 1000 “1 10 100 1000 Vee (V) Vee (V) Nippon Electric Co.Ltd. NEC Building, 33-1, Shiba-Gochome, Minato-ku, Tokyo 108, Japan Te-1123€u Tol: Tokyo 454-1111 . FEB.28-76 elon Address: NEC TOK’A 422086" Printed in Japan