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- Manufacturer or author: 淄博圣诺电子
- PDF pages: 2
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/circle6 G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n /circle6 L o w F o r w a r d V o l t a g e D r o p /circle6 High Current Capability /circle6 H i g h S u r g e C u r r e n t C a p a b i l i t y /circle6 Designed for Surface Mount Application /circle6 P l a s t i c M a t e r i a l – U L R e c o g n i t i o n F l a m m a b i l i t y C l a s s i f i c a t i o n 9 4 V - O Me c h a n i c a l D a t a /circle6 /circle6 T erminals: Plated Leads Solderable per MIL-STD-202, Method 208 /circle6 P o l a r i t y : A s M a r k e d o n C a s e /circle6 /circle6 Mounting Position: Any /circle6 Marking: Type Number Maximum R atings and Electrical Characteristics @TA=25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 RM S Reverse Voltage VR(RM S) 40 V A verage Rectifi ed Output Current @T A = 40°C IO 1. 0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A 0.98 V Peak Re v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125° C IRM 2.0 500 µA T ypical Junction Capacitance per element (Note 1) C j 25 pF T ypical Thermal Resistance per leg (Note 2) RθJA RθJL 15 °C/ W Operat ing and Storage Temperature Range Tj, TSTG -55 to +150 ° C Note: 2. Mounted on PC board with 13mm 2 copper p ad. 1 of 2 ! Le www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. /circle6 Forw ard Voltage per element @I F FM = 1. 0A V C a s e : D F M, M o l d e d P l a s t i c B40C800DM B80C800DM B125C800DM V B80 C800DM B125 C800DM B250 C800DM B380 C800DM 200 400 125 600 250 1000 380 DE H JK L M BA C G DFM Dim Min Max A 6.20 6.50 B 6.80 8.40 C 7.24 8.70 D 0.20 0.38 E G H 1.30 J 3.80 4.90 K L M All Dimensions in mm 0.90 1.40 5.00 5.20 0.45 0.58 8.12 8.80 2.15 3.40 https://alldatasheet.com
www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. 800DM 0.01 0.1 1.0 INSTANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 11 0 100 I PEAK FORWARD SURGE CURRENT (A) FS M N U MBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Cu rrent Sing le half-sine-Wave (JEDEC Method) 100 1 10 100 C ,CAP A CITANCE (pF) J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f = 1.0 Mhz V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (µA) R PE RCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125 °Cj T = 25°Cj T , AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve A 1.0 0.5 40 60 80 100 120 140 I , A VERAGE FORWARD CURRENT (A) 60 Hz Resistive or Inductive load B250C800DM B380C800DM B40C800DM B80C800DM B125C800DM https://www.alldatasheet.com