B320N DSK | Alldatasheet
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Technical content
- 0 0.1 7.0 4. 0 0.3 2. 3 0.2 1.5 ±0.3 0.203MAX 8.1 ±0.3 0.25 ±0.06
FEATURES
MAXIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified B340N B350N B360N B2N N B 4N B 5N B6N Maximum recurrent peak reverse voltage V RRM 40 50 60 V Max imum RMS v oltage V RWS 28 35 42 V Maximum DC blocking voltage V DC 40 50 60 V Maximum average forw ord rectified current at c T L (SEE FIG.1) (NOTE 2) I (AV) A Peak forw ard surge current 8.3ms single half- c sine-w ave superimposed on rated load(JEDEC c Method) I FSM A Maximum instantaneous forw ard voltage at v 3.0A(NOTE.1) V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage(NOTE1) @T A =100 o C R θ JA R θ JL Operating junction and storage temperature range T STG o C Storage temperature range T J o C 0.5 50.0 10.0 I R NOTE: 1.Pulse test:300 μS pulse width,1%duty cy cle B320N-B360N )copper pad areas REVERSE VOLTAGE: 20 --- 60 V CURRENT: 3.0 A ◇ Built-in strain relief ◇ Case:JEDEC NSMC,molded plastic over 1111pass ivated chip Dev ice marking code ◇ Low power loss,high effciency ◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
Typical thermal resitance (NOTE2) o C/W B330N ◇ High temperature soldering guaranteed:250 o C/10 1 11 seconds at terminals B320N ◇ Polarity: Color band denotes cathode end mA UNITS NSMC ◇ Low profile package ◇ For surface mounted applications 14 21 ◇ Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 ◇ High current capability,low forward voltage drop 100.0 3.0 ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection -55--- +150 -55--- +125 0.50 0.70 ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability Dimensions in millimeters BARRIER RECTIFIERS SURFACE MOUNT SCHOTTKY Diode Semiconductor Korea www.diode.kr
0.01 0.1 10.0 1.4 30.0 1.6 T J =125 C T J =150 C T J =25 C Puise Width=300 S 1%DUTY CYCLE B320N-B340 N B350N-B360N O O O T J =125 C T J =25 C T J =75 C B320N-B340N B350N-B360N 0.001 0.01 0.1 200 4 06 08 0 1 0 0 T J =25 C f=1.0MHz Vsig=50mVp-p B320N-B340N B350N-B360N O 1000 100 1000.1 1.0 10 0.1 0.1 1 100 100 0.01 AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES REVERSE VOLTAGE,VOLTS PULSE DURATION,SEC FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE O C/W JUNCTION CAPACLTANCE pF NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, ％ AMBIENT TEMPERATURE ℃ B320N - - B360N FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT Resistive or inductive Load 1.0 2.0 60 70 80 90 100 110 120 130 140 150 160 3.0 4.0 B320N-B360N P.C.B.MOUNTED ON COPPERPAD AREAS 100 11 01 00 8.3ms Single Half Sine-Wave (JEDEC Method) www.diode.kr Diode Semiconductor Korea