B31N20D

IRFB31N20D IRF | Alldatasheet

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Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current  124 PD @T A = 25°C Power Dissipation ‡ 3.1 W PD @T C = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 2.1 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw† 10 lbf•in (1.1N•m) www.irf.com 1 2/14/00 IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET ® Power MOSFET l High frequency DC-DC converters Benefits

Applications

l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS R DS(on) max I D 200V 0.082 Ω 31A Typical SMPS Topologies l Telecom 48V Input Forward Converters Absolute Maximum Ratings Notes  through ‡ are on page 11 D 2Pak IRFS31N20D TO-220AB IRFB31N20D TO-262 IRFSL31N20D PD- 93805B

2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 17 ––– ––– S V DS = 50V, ID = 18A Q g Total Gate Charge ––– 70 110 I D = 18A Q gs Gate-to-Source Charge ––– 18 27 nC V DS = 160V Q gd Gate-to-Drain ("Miller") Charge ––– 33 49 V GS = 10V, „ td(on) Turn-On Delay Time ––– 16 ––– V DD = 100V tr Rise Time ––– 38 ––– I D = 18A td(off) Turn-Off Delay Time ––– 26 ––– R G = 2.5Ω tf Fall Time ––– 10 ––– R D = 5.4Ω „ C iss Input Capacitance ––– 2370 ––– V GS = 0V C oss Output Capacitance ––– 390 ––– V DS = 25V C rss Reverse Transfer Capacitance ––– 78 ––– pF ƒ = 1.0MHz C oss Output Capacitance ––– 2860 ––– V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance ––– 150 ––– V GS = 0V, VDS = 160V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance ––– 170 ––– V GS = 0V, VDS = 0V to 160V Dynamic @ T J = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy‚ ––– 420 mJ IAR Avalanche Current ––– 18 A EAR Repetitive Avalanche Energy ––– 20 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)  ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 18A, VGS = 0V „ trr Reverse Recovery Time ––– 200 300 ns T J = 25°C, IF = 18A Q rr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs „ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 124 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V V GS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.082 Ω VGS = 10V, ID = 18A „ VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V V DS = VGS , ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V Gate-to-Source Forward Leakage ––– ––– 100 V GS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30VIGSS IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.75 R θCS Case-to-Sink, Flat, Greased Surface † 0.50 ––– °C/W R θJA Junction-to-Ambient† ––– 62 R θJA Junction-to-Ambient‡ ––– 40

www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25CJ ° TOP BOTTOM VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 5.5V 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175CJ ° TOP BOTTOM VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 5.5V 0.1 100 1000 5 6 7 8 9 10 11 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 30A

4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 20 40 60 80 100 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 18A V = 40VDS V = 100VDS V = 160VDS 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° 100 1000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms 1 10 100 1000 VDS , Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd

www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS R G D.U.T. 10V -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 25 50 75 100 125 150 175 T , Case Temperature( C) I , Drain Current (A) D

6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0. 01Ωtp D.U.T LV DS - V DD DRIVER A 15V 20V 25 50 75 100 125 150 175 200 400 600 800 1000 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 7.3A 15A 18A

www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-channel HEXFET® Power MOSFETs * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G VDD

• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance Current Transformer

8 www.irf.com LEAD ASSI GNMENTS 1 - G ATE 2 - D RA IN 3 - S OU RC E 4 - D RA IN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) M IN 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 0.36 (.014) M B A M 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 C O N TR O LLIN G D IM E NS ION : INC H 4 H EATS IN K & LEA D M E ASUR E M ENTS D O NOT I NCLUDE BURRS. TO-220AB Part Marking Information Dimensions are shown in millimeters (inches) PART NUMBERINTERNATIONAL RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010 W ITH ASSEMBLY LOT CODE 9B1M ASSEMBLY LOT CODE DATE CODE ( Y Y WW) YY = YEAR W W = W EEK 9246 IRF1010 9B 1M A

www.irf.com 9 D 2Pak Package Outline D 2Pak Part Marking Information 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. - B - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - A - 1 3 15.49 (.610) 14.73 (.580) 3X 0.93 (.037) 0.69 (.027) 5.08 (.200) 3X 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) MAX. NOTES: 1 DI MENSI ONS AFTER SOLDER DI P. 2 DI MENSI ONI NG & TOLERANCI NG PER ANSI Y14.5M, 1982. 3 CONTROLLI NG DI MENSION : I NCH. 4 HEATSINK & LEAD DI MENSI ONS DO NOT INCLUDE BURRS. 0.55 (.022) 0.46 (.018) 0.25 (.010) M B A M MI NI MUM RECOMMENDED FOOTPRI NT 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) LEAD ASSI GNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 2.54 (.100) PART NUMBERINTERNATIONAL RECTIFIER LOGO DATE CODE (YYW W ) YY = YEAR WW = WE EK ASSEMBLY LOT CODE F530S 9B 1M 9246 A

10 www.irf.com TO-262 Part Marking Information

www.irf.com 11  Repetitive rating; pulse width limited by max. junction temperature. ƒISD ≤ 18A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C Notes: ‚ Starting TJ = 25°C, L = 3.8mH RG = 25Ω , IAS = 18A. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000 D 2Pak Tape & Reel Information TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16. 10 (. 634) 15. 90 (. 626) 1.75 (.069) 1.25 (.049) 11.60 (. 457) 11.40 (. 449) 15.42 (.609) 15.22 (.601) 4. 72 (.136) 4. 52 (.178) 24. 30 (.957) 23. 90 (.941) 0. 368 (.0145) 0. 342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (. 961) NOTES : 1. COMFORMS TO EI A-418. 2. CONTROLLI NG DI MENSI ON: MI LLI METER. 3. DIMENSI ON MEASURED @ HUB. 4. I NCLUDES FLANGE DI STORTI ON @ OUTER EDGE. † This is only applied to TO-220AB package ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.