B30H40G THINKISEMI | Alldatasheet

Document overview

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Technical content

FEATURES

  • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound.
  • Metal silicon junction, majority carrier conduction
  • Low power loss, high efficiency.
  • High current capability
  • Guardring for overvoltage protection
  • For use in low voltage,high frequency inverters free wheeling , and polarlity protection applications.
  • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
  • Case: ITO-220AB/TO-220F-3L Insulated Pkg
  • Terminals: solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: As marked.
  • Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Note : Both Bonding and Chip structure are available. PARAMETER SYMBOL UNITS Maximum Recurrent Peak Reverse Voltage V RRM 40 45 50 60 80 90 100 150 200 V Maximum RMS Voltage V RMS 28 31.5 35 42 56 63 70 105 140 V Maximum DC Blocking Voltage V DC 40 45 50 60 80 90 100 150 200 V Maximum Average Forward Current I F(AV) 30 A Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) I FSM 275 A Maximum Forward Voltage at 15A per leg V F Maximum DC Reverse Current at Rated DC Blocking Voltage T J =25 T J =125 I R 0.1 20 mA T ypical Thermal Resistance R JC 3.0 Operating Junction and Storage T emperature Range T J STG -55 to + 150 -65 to + 175 V
  • Weight: 2.2 gram approximately. B30H40G thru B30H200G Pb B30H40G thru B30H200G

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.10T ITO-220AB/TO-220F-3L Unit:mm Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "GA" Suffix "GD" Suffix "GS"Suffix "G" B30H40G B30H45G B30H50G B30H60G B30H80G B30H90G B30H100G B30H150G B30H200G .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0)

Fig.1- FORWARD CURRENT DERATING CURVE RATING AND CHARACTERISTIC CURVES Fig.2- MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES NO. OF CYCLE AT 60Hz 200 175 150 125 100 1 2 5 10 20 50 100 250 225 275 Fig.3- TYPICAL REVERSE CHARACTERISTIC 1.0 0.1 0.01 .001 200 40 60 80 100 INSTANTANEOUS REVERSE CURRENT, mA PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, % TC=125 C O TC=75 C O TC=25 C O Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT AMPERES 1.0 0.8 0.6 0.4 0.2 0.1 40-45V 50-60V 80-100V 150-200V INSTANTANEOUS FORWARD VOLTAGE, VOLTS LEAD TEMPERATURE, C O AVERAGE FORWARD RECTIFIED CURRENT AMPERES 0 20 40 60 80 100 120 140 160 180 40V 45-200V RESISTIVE OR INDUCTIVE LOAD B30H40G thru B30H200G © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.10T