B3006

FKBB3006 FETEK | Alldatasheet

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FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKBB3006 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 40 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 20 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 15 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 12 A IDM Pulsed Drain Current2 140 A EAS Single Pulse Avalanche Energy3 115.2 mJ IAS Avalanche Current 48 A PD@TC=25℃ Total Power Dissipation4 59 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.1 ℃/W BVDSS RDSON ID 30V 5.5mΩ 40A Absolute Maximum Ratings Thermal Data The FKBB3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Description PRPAK3X3 Pin Configuration Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology

FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKBB3006 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 4.8 5.5 VGS=4.5V , ID=10A --- 6.5 9 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 43 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---  Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 20 --- nC Qgs Gate-Source Charge --- 7.6 --- Qgd Gate-Drain Charge --- 7.2 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=15A --- 7.8 --- ns Tr Rise Time --- 15 --- Td(off) Turn-Off Delay Time --- 37.3 --- Tf Fall Time --- 10.6 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2295 --- pF Coss Output Capacitance --- 267 --- Crss Reverse Transfer Capacitance --- 210 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- 40 A ISM Pulsed Source Current2,6 --- --- 140 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=20A , di/dt=100A/µs , TJ=25℃ --- 14 --- nS Qrr Reverse Recovery Charge --- 5 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKBB3006 N-Ch 30V Fast Switching MOSFETs 120 150 180 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5VVGS=3V 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS(A) TJ=25℃TJ=150℃ 0 6 12 18 24 30 36 42 QG , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) ID=15A VDS=24V VDS=15V 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKBB3006 N-Ch 30V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 VDS (V) ID (A) 10us 100us 10ms 100ms DC TC=25℃ Single Pulse 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform