B40C800 WTE | Alldatasheet

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Technical content

Features

! Diffused Junction ! L o w F o r w a r d V o l t a g e D r o p A ! High Current Capability ! High Reliability ! High Surge Current Capability B ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s + ~ ~ - C D Mechanical Data ! C a s e : M o l d e d P l a s t i c E ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ~ ! Polarity: As Marked on Body ! Weight: 1.1 grams (approx.) - ! M o u n t i n g P o s i t i o n : A n y + ! M a r k i n g : T y p e N u m b e r G G ~ Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol B40C 800 B80C 800 B125C 800 B250C 800 B380C 800 B500C

800 Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 100 200 300 600 900 1200 V Input Voltage Recommended V R(RMS) 40 80 125 250 380 500 V Average Rectified Output Current (Note 1) @TA = 50°C I O 0.8 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 45 A Forward Voltage (per element) @IF = 0.8A V FM 1.0 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 500 µA Operating Temperature Range T j -55 to +125 °C Storage Temperature Range T STG -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. WTE POWER SEMICONDUCTORS WOB Dim Min Max A 8.60 9.10 B 5.0 5.50 C 27.9 — D 25.4 — E 0.71 0.81 G 4.60 5.60 All Dimensions in mm

0.01 0.1 1.0 0.2 0.6 1.0 1.4 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°C Pulse width = 300µs j 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current Pulse Width 8.3 ms Single Half-Sine-Wave (JEDEC Method) 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1mz j 0.5 1.0 1.5 0 25 50 100 125 150 75 I , AVERAGE FORWARD CURRENT (A)F T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A Single phase half-sine-wave 60Hz resistive or inductive load B40C800 – B500C800 2 of 3 © 2002 W on-Top Electronics

B40C800 – B500C800 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity B40C800 Round Bridge 1000 Units/Box B80C800 Round Bridge 1000 Units/Box B125C800 Round Bridge 1000 Units/Box B250C800 Round Bridge 1000 Units/Box B380C800 Round Bridge 1000 Units/Box B500C800 Round Bridge 1000 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com